Patents by Inventor Jia-Qing Wang

Jia-Qing Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Identifying new semiconductor detector materials by D.C. ionization conductivity
    Patent number: 8304748
    Abstract: Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.
    Type: Grant
    Filed: October 19, 2006
    Date of Patent: November 6, 2012
    Assignee: The Regents of the University of California
    Inventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Yetta D. Porter-Chapman, Floyd J. James, Mattias K. Klintenberg, Jie Wang, Jia-Qing Wang, legal representative
  • Identifying New Semiconductor Detector Materials by D.C. Ionization Conductivity
    Publication number: 20090212395
    Abstract: Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.
    Type: Application
    Filed: October 19, 2006
    Publication date: August 27, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Yetta D. Porter-Chapman, Floyd J. James, Mattias K. Klintenberg, Jie Wang, Jia-Qing Wang