Abstract: A technique for narrowing a linewidth of a plurality of lines of a coherent comb laser (CCL) concurrently comprises providing a mode-locked semiconductor coherent comb laser (CCL) adapted to output of at least 4 mode-locked lines; tapping a fraction of a power from the CCL from the laser cavity to form a tapped beam; propagating the tapped beam to an attenuator to produce an attenuated beam; and reinserting the attenuated beam into the laser cavity, where the reinserted beam has a power less than 10% of a power of the tapped beam. The reinsertion allows the CCL to be operated to output the mode-locked lines, each with a linewidth of less than 80% of the original linewidth. By propagating the tapped and attenuated beams on a solid waveguide, and ensuring that the secondary cavity is polarization maintaining, improved stability of the linewidth narrowing is ensured.

Abstract: A technique for narrowing a linewidth of a plurality of lines of a coherent comb laser (CCL) concurrently comprises providing a mode-locked semiconductor coherent comb laser (CCL) adapted to output of at least 4 mode-locked lines; tapping a fraction of a power from the CCL from the laser cavity to form a tapped beam; propagating the tapped beam to an attenuator to produce an attenuated beam; and reinserting the attenuated beam into the laser cavity, where the reinserted beam has a power less than 10% of a power of the tapped beam. The reinsertion allows the CCL to be operated to output the mode-locked lines, each with a linewidth of less than 80% of the original linewidth. By propagating the tapped and attenuated beams on a solid waveguide, and ensuring that the secondary cavity is polarization maintaining, improved stability of the linewidth narrowing is ensured.

Abstract: A technique for narrowing a linewidth of a plurality of lines of a coherent comb laser (CCL) concurrently comprises providing a mode-locked semiconductor coherent comb laser (CCL) adapted to output of at least 4 mode-locked lines; tapping a fraction of a power from the CCL from the laser cavity to form a tapped beam; propagating the tapped beam to an attenuator to produce an attenuated beam; and reinserting the attenuated beam into the laser cavity, where the reinserted beam has a power less than 10% of a power of the tapped beam. The reinsertion allows the CCL to be operated to output the mode-locked lines, each with a linewidth of less than 80% of the original linewidth. By propagating the tapped and attenuated beams on a solid waveguide, and ensuring that the secondary cavity is polarization maintaining, improved stability of the linewidth narrowing is ensured.

Abstract: A technique for narrowing a linewidth of a plurality of lines of a coherent comb laser (CCL) concurrently comprises providing a mode-locked semiconductor coherent comb laser (CCL) adapted to output of at least 4 mode-locked lines; tapping a fraction of a power from the CCL from the laser cavity to form a tapped beam; propagating the tapped beam to an attenuator to produce an attenuated beam; and reinserting the attenuated beam into the laser cavity, where the reinserted beam has a power less than 10% of a power of the tapped beam. The reinsertion allows the CCL to be operated to output the mode-locked lines, each with a linewidth of less than 80% of the original linewidth. By propagating the tapped and attenuated beams on a solid waveguide, and ensuring that the secondary cavity is polarization maintaining, improved stability of the linewidth narrowing is ensured.

Abstract: A multi-band (multi-color) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.

Abstract: Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.

Abstract: A multi-band (multi-colour) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.

Abstract: Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.

Abstract: An integrated optical dynamic channel equalizer that can be employed to equalize the channel gain level in a WDM transmission line and monitor the optical channel performance. The device consists of a circulator, a dynamic gain equalizer chip and a controller. Due to the simplicity of the dynamic gain equalizer chip, which includes one 1×n multiplexer/demultiplexer, an n-channel variable optical attenuator array (VOA-n), a partially transparent dielectric reflective means and an n-channel detector array, the device is very compact and can be fabricated at low cost. By placing a quarter wave plate between the n-channel variable optical attenuator array and the partially transparent reflective means in the dynamic channel equalizer chip, the device can be rendered polarization insensitive.

Abstract: An integrated optical dynamic channel equalizer that can be employed to equalize the channel gain level in a WDM transmission line and monitor the optical channel performance. The device consists of a circulator, a dynamic gain equalizer chip and a controller. Due to the simplicity of the dynamic gain equalizer chip, which includes one 1×n multiplexer/demultiplexer, an n-channel variable optical attenuator array (VOA-n), a partially transparent dielectric reflective means and an n-channel detector array, the device is very compact and can be fabricated at low cost. By placing a quarter wave plate between the n-channel variable optical attenuator array and the partially transparent reflective means in the dynamic channel equalizer chip, the device can be rendered polarization insensitive.