Abstract: A method and apparatus for sound enhancement are provided in this invention. The method comprises: obtaining sound signals and converting the sound signals into digital signals; decomposing the digital signals to obtain a plurality of IMFs or pseudo-IMFs; selectively amplifying the amplitudes of the IMFs and pseudo-IMFs; reconstituting the selectively amplified IMFs or pseudo-IMFs to obtain reconstituted signals and converting the reconstituted signals into analog signals. The present invention is based on the Hilbert-Huang transform. Through the present invention, the sound can be selectively amplified, and only the high-frequency consonants in the sound are amplified without vowel, which effectively improves the clarity of the enhanced sound. The present invention overcomes the problems in the current sound enhancement method which makes the sound louder without increasing the clarity.

Abstract: An electrostatic discharge protection device includes a first well region, a second well region, a first doped region, and a first heavily doped region. The first well region and the second well region are disposed in a semiconductor substrate. The first doped region is disposed in the first well region and the second well region. The first heavily doped region is disposed in the first doped region in the first well region. The first well region and the first doped region have a first conductivity type, and the second well region and the first heavily doped region have a second conductivity type that is the opposite of the first conductivity type.

Abstract: A method and apparatus for sound enhancement are provided in this invention. The method comprises: obtaining sound signals and converting the sound signals into digital signals; decomposing the digital signals to obtain a plurality of IMFs or pseudo-IMFs; selectively amplifying the amplitudes of the IMFs and pseudo-IMFs; reconstituting the selectively amplified IMFs or pseudo-IMFs to obtain reconstituted signals and converting the reconstituted signals into analog signals. The present invention is based on the Hilbert-Huang transform. Through the present invention, the sound can be selectively amplified, and only the high-frequency consonants in the sound are amplified without vowel, which effectively improves the clarity of the enhanced sound. The present invention overcomes the problems in the current sound enhancement method which makes the sound louder without increasing the clarity.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes an electrostatic discharge detection circuit, a discharge circuit, and a switch. The electrostatic discharge detection circuit detects whether an electrostatic discharge event occurs at the bounding pad to generate a first detection circuit. The discharge circuit receives the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the discharge circuit provides a discharge path between the bounding pad and a ground terminal according to the first detection signal. The switch is coupled between the core circuit and the ground terminal and controlled by the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the switch is turned off according to the first detection signal.

Abstract: A semiconductor structure includes a first P-well, a first P-type diffusion region, a first N-type diffusion region, a second P-type diffusion region, and a first poly-silicon layer. The first P-type diffusion region is deposited in the first P-well and coupled to a first electrode. The first N-well is adjacent to the P-well. The first N-type diffusion region is deposited in the first N-well. The second P-type diffusion region is deposited between the first P-type diffusion region and the first N-type diffusion region, which is deposited in the first N-well. The second P-type diffusion region and the first N-type diffusion region are coupled to a second electrode. The first poly-silicon layer is deposited on the first P-type diffusion region.

Abstract: An electrostatic discharge protection device includes a first well region, a second well region, a first doped region, and a first heavily doped region. The first well region and the second well region are disposed in a semiconductor substrate. The first doped region is disposed in the first well region and the second well region. The first heavily doped region is disposed in the first doped region in the first well region. The first well region and the first doped region have a first conductivity type, and the second well region and the first heavily doped region have a second conductivity type that is the opposite of the first conductivity type.

Abstract: A semiconductor structure includes a first P-well, a first P-type diffusion region, a first N-type diffusion region, a second P-type diffusion region, and a first poly-silicon layer. The first P-type diffusion region is deposited in the first P-well and coupled to a first electrode. The first N-well is adjacent to the P-well. The first N-type diffusion region is deposited in the first N-well. The second P-type diffusion region is deposited between the first P-type diffusion region and the first N-type diffusion region, which is deposited in the first N-well. The second P-type diffusion region and the first N-type diffusion region are coupled to a second electrode. The first poly-silicon layer is deposited on the first P-type diffusion region.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes an electrostatic discharge detection circuit, a discharge circuit, and a switch. The electrostatic discharge detection circuit detects whether an electrostatic discharge event occurs at the bounding pad to generate a first detection circuit. The discharge circuit receives the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the discharge circuit provides a discharge path between the bounding pad and a ground terminal according to the first detection signal. The switch is coupled between the core circuit and the ground terminal and controlled by the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the switch is turned off according to the first detection signal.

Abstract: The invention discloses a method and a system for quickly and directly processing an original signal into a plurality of mode functions, the steps comprises: decomposing the original signal by Empirical Mode Decomposition (EMD) method to choose a first intrinsic mode functions (IMFs). Then, adding the plurality of level n conjugate masking functions, which are selected from a group of sinusoidal functions comprising the mean amplitude and the mean frequency of the first IMF, to the original signal individually to obtain level n mode functions, until the level n mode function is a monotonic function, wherein the plurality of mode functions are the IMFs between each frequency regions of the original signal. The invention not only includes the advantage of EMD analyzing, but also excludes the problem of mode mixing phenomenon which is caused by the intermittent disturbance.

Abstract: This invention discloses a multi-scales intrinsic entropy analysis method that can quantify the entropies on difference time scales for a complex time series. The implementation of the method decomposes a complex time series into a plurality of intrinsic mode functions by a nonlinear signal processing algorithm, such as the method of empirical mode decomposition. Then, the entropy increments can be calculated on multiple coarse-graining scales when an intrinsic mode functions is added into the reconstructed time series analyzed by the method of multi-scale entropy. The entropy increment is significant on a specific coarse-graining scale, which corresponds to the averaged period of the intrinsic mode functions. The entropy increment on the specific coarse-graining scale is defined as the intrinsic entropy for an intrinsic mode functions. Multiple intrinsic entropies represent the entropy properties for a complex time series on their corresponding time scales.

Abstract: A human body balance signals measuring system and the method of analysis thereof that has a measuring device, a filter amplifier, an A/D convertor (analog to digital convertor), a signal receiving module, and a data analyze module. The measuring device is linked with the filter amplifier. The filter amplifier can detect and collect the voltage signals caused by pressure change and then filter and amplify the signals. The signals are send to the A/D convertor to convert the analog circuit signals into digital signals for the receiving module to use these voltage change values for human body center of gravity offset evaluation to obtain the COP (center of pressure) offset and COP offset velocity. The data analyze module uses the measured body center of gravity offset for MSE (multiscale entropy) to quantitative the dynamic of human body center of gravity and verify the accuracy of this measuring system.

Abstract: A human body balance signals measuring system and the method of analysis thereof that has a measuring device, a filter amplifier, an A/D convertor (analog to digital convertor), a signal receiving module, and a data analyze module. The measuring device is linked with the filter amplifier. The filter amplifier can detect and collect the voltage signals caused by pressure change and then filter and amplify the signals. The signals are send to the A/D convertor to convert the analog circuit signals into digital signals for the receiving module to use these voltage change values for human body center of gravity offset evaluation to obtain the COP (center of pressure) offset and COP offset velocity. The data analyze module uses the measured body center of gravity offset for MSE (multiscale entropy) to quantitative the dynamic of human body center of gravity and verify the accuracy of this measuring system.