Patents by Inventor Jia-Rong Yu

Jia-Rong Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
    Patent number: 6734493
    Abstract: Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: May 11, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Hui Chen, Chi-Hung Kao, Jeng Gong, Kuo-Hsu Huang, Meng-Chi Wu, Jia-Rong Yu
  • Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
    Publication number: 20030151088
    Abstract: Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.
    Type: Application
    Filed: February 8, 2002
    Publication date: August 14, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Hui Chen, Chi-Hung Kao, Jeng Gong, Kuo--Hsu Huang, Meng-Chi Wu, Jia-Rong Yu