Patents by Inventor Jiarui WANG
Jiarui WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11960535Abstract: Embodiments of the present disclosure provide a method for recommending a podcast in music application and a device, where the method includes: a terminal device receives a start instruction for a podcast interface the music application; and the terminal device displays a first preset number of recommended podcast programs in the podcast interface in response to the start instruction, where each of the recommended podcast programs is an episode of audio data, and the recommended podcast programs include a podcast program matching with a preference of a user who uses the music application.Type: GrantFiled: July 2, 2021Date of Patent: April 16, 2024Assignee: BEIJING BYTEDANCE NETWORK TECHNOLOGY CO., LTD.Inventors: Haiyang Huang, Jiarui Xu, Yang Li, Weihao Wang, Yiming Xiong, Yuxin Yang
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Publication number: 20240105923Abstract: A positive electrode active material is granular and comprises a compound represented by formula 1: (NaxAy)a?bM1[M2(CN)6]?, wherein A is selected from at least one of alkali metal elements and has an ionic radius greater than that of sodium, M1 and M2 are each independently selected from at least one of transition metal elements, 0<y?0.2, 0<x+y?2, 0???1, a+b=2, 0.85?a?0.98, (represents a vacancy, and b represents the number of vacancies; and when the positive electrode active material is dissolved, at a temperature of 20° C., into an aqueous solution having a concentration of 5 g/100 g water, a pH value of the aqueous solution is in a range of 7.6 to 8.5. The positive electrode active material has good cycling and rate performance, and a high specific capacity.Type: ApplicationFiled: December 5, 2023Publication date: March 28, 2024Applicant: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITEDInventors: Jiarui TIAN, Xinxin ZHANG, Chuying OUYANG, Yongsheng GUO, Yuejuan WAN, Wenguang LIN, Jiadian LAN, Jixiang WANG
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Publication number: 20240083759Abstract: The present application provides a positive electrode active material which may be in a particulate form and comprise a compound represented by Formula 1: NaxAyM1[M2(CN)6]?·zH2O??Formula 1 wherein, A is selected from at least one of an alkali metal element and an alkaline earth metal element, and the ionic radius of A is greater than the ionic radius of sodium; M1 and M2 are each independently selected from at least one of a transition metal element, 0<y?0.2, 0<x+y?2, 0<??1, and 0?z?10; and the particles of the positive electrode active material may have a gradient layer in which the content of the A element decreases from the particle surface to the particle interior.Type: ApplicationFiled: November 13, 2023Publication date: March 14, 2024Applicant: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITEDInventors: Jiarui TIAN, Xinxin ZHANG, Chuying OUYANG, Yongsheng GUO, Jiadian LAN, Jixiang WANG, Wenguang LIN, Yuejuan WAN
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Publication number: 20240085866Abstract: The present disclosure provides a method and device for intelligent control of heating furnace combustion based on a big data cloud platform, which relates to the technical field of artificial intelligence control. The method includes: construction of big data cloud platform based on production and operation parameters of the heating furnace; identification of key factors in the production process of the heating furnace by using big data mining technology; independent deployment of traditional heating furnace combustion control systems based on the mechanism model; and integration of cloud platform big data expert knowledge base and the heating furnace combustion intelligent control system.Type: ApplicationFiled: September 7, 2023Publication date: March 14, 2024Applicant: University of Science and Technology BeijingInventors: Qing LI, Fengqin LIN, Hui LI, Li WANG, Chengyong XIAO, Xu YANG, Jiarui CUI, Chunqiu WAN, Qun YAN, Yan LIU, Lei MIAO, Jin GUO, Boyu ZHANG, Chen HUANG, Yaming XI, Yuxuan LIN
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Publication number: 20240078416Abstract: Described are a system, method, and computer program product for dynamic node classification in temporal-based machine learning classification models. The method includes receiving graph data of a discrete time dynamic graph including graph snapshots, and node classifications associated with all nodes in the discrete time dynamic graph. The method includes converting the discrete time dynamic graph to a time-augmented spatio-temporal graph and generating an adjacency matrix based on a temporal walk of the time-augmented spatio-temporal graph. The method includes generating an adaptive information transition matrix based on the adjacency matrix and determining feature vectors based on the nodes and the node attribute matrix of each graph snapshot.Type: ApplicationFiled: January 30, 2023Publication date: March 7, 2024Applicant: Visa International Service AssociationInventors: Jiarui Sun, Mengting Gu, Michael Yeh, Liang Wang, Wei Zhang
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Publication number: 20230274997Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack is provided and includes a silicon oxide layer disposed on a workpiece, a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer, and a hydrogen-rich silicon nitride layer disposed on the nitrogen-rich silicon nitride layer. The hydrogen-rich silicon nitride layer has a greater hydrogen concentration than the nitrogen-rich silicon nitride layer.Type: ApplicationFiled: May 9, 2023Publication date: August 31, 2023Applicant: Applied Materials, Inc.Inventors: Rodney S. LIM, Jung Bae KIM, Jiarui WANG, Yi CUI, Dong Kil YIM, Soo Young CHOI
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Patent number: 11699628Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.Type: GrantFiled: June 3, 2021Date of Patent: July 11, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Rodney S. Lim, Jung Bae Kim, Jiarui Wang, Yi Cui, Dong Kil Yim, Soo Young Choi
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Publication number: 20210287955Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.Type: ApplicationFiled: June 3, 2021Publication date: September 16, 2021Inventors: Rodney S. LIM, Jung Bae KIM, Jiarui WANG, Yi CUI, Dong Kil YIM, Soo Young CHOI
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Patent number: 11037851Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.Type: GrantFiled: August 30, 2019Date of Patent: June 15, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Rodney S. Lim, Jung Bae Kim, Jiarui Wang, Yi Cui, Dong Kil Yim, Soo Young Choi
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Patent number: 10950445Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.Type: GrantFiled: July 29, 2020Date of Patent: March 16, 2021Assignee: Applied Materials, Inc.Inventors: Prashant Kumar Kulshreshtha, Jiarui Wang, Kwangduk Douglas Lee, Milind Gadre, Xiaoquan Min, Paul Connors
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Publication number: 20210066153Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.Type: ApplicationFiled: August 30, 2019Publication date: March 4, 2021Inventors: Rodney S. LIM, Jung Bae KIM, Jiarui WANG, Yi CUI, Dong Kil YIM, Soo Young CHOI
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Publication number: 20200357643Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.Type: ApplicationFiled: July 29, 2020Publication date: November 12, 2020Inventors: Prashant Kumar KULSHRESHTHA, Jiarui WANG, Kwangduk Douglas LEE, Milind GADRE, Xiaoquan MIN, Paul CONNORS
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Patent number: 10734232Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.Type: GrantFiled: May 11, 2018Date of Patent: August 4, 2020Assignee: Applied Materials, Inc.Inventors: Prashant Kumar Kulshreshtha, Jiarui Wang, Kwangduk Douglas Lee, Milind Gadre, Xiaoquan Min, Paul Connors
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Patent number: 10504727Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.Type: GrantFiled: September 5, 2017Date of Patent: December 10, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Jiarui Wang, Prashant Kumar Kulshreshtha, Eswaranand Venkatasubramanian, Susmit Singha Roy, Kwangduk Douglas Lee
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Patent number: 10468221Abstract: Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.Type: GrantFiled: September 5, 2018Date of Patent: November 5, 2019Assignee: Applied Materials, Inc.Inventors: Gaku Furuta, Soo Young Choi, Yi Cui, Robin L. Tiner, Jinhyun Cho, Jiarui Wang, Suhail Anwar
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Publication number: 20190096624Abstract: Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.Type: ApplicationFiled: September 5, 2018Publication date: March 28, 2019Inventors: Gaku FURUTA, Soo Young CHOI, Yi CUI, Robin L. TINER, Jinhyun CHO, Jiarui WANG, Suhail ANWAR
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Publication number: 20180330951Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.Type: ApplicationFiled: May 11, 2018Publication date: November 15, 2018Applicant: Applied Materials, Inc.Inventors: Prashant Kumar KULSHRESHTHA, Jiarui WANG, Kwangduk Douglas LEE, Milind GADRE, Xiaoquan MIN, Paul CONNORS
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Publication number: 20180076032Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.Type: ApplicationFiled: September 5, 2017Publication date: March 15, 2018Inventors: Jiarui WANG, Prashant Kumar KULSHRESHTHA, Eswaranand VENKATASUBRAMANIAN, Susmit Singha ROY, Kwangduk Douglas LEE