Abstract: The present disclosure provides a pilot proportional control valve apparatus, an automatic calibration method, engineering machinery and a storage medium, and relates to the technical field of engineering machinery, wherein the pilot proportional control valve apparatus including a hydraulic system and a controller; the hydraulic system including: a plurality of proportional pressure reducing valves, a calibration reversing valve, and a pressure sensor; the calibration reversing valve including a plurality of reversing units, an output end of each proportional pressure reducing valve being respectively connected with an input end of one corresponding reversing unit; the pressure sensor being arranged in a detection oil path; the controller performing calibration processing on the proportional pressure reducing valve according to a pilot oil detection pressure and an output pressure value of the proportional pressure reducing valve.

Abstract: A display panel and a fabricating method thereof, and a displaying device. The display panel includes a substrate, a resistance reducing trace, an inter-layer-medium layer and a signal line. The substrate is divided into a plurality of sub-pixel regions and a pixel separating region. The resistance reducing trace is provided on the pixel separating region of the substrate. The inter-layer-medium layer is provided on the substrate, and the inter-layer-medium layer has an opening exposing the resistance reducing trace. The signal line is provided within the opening, the signal line is connected to the resistance reducing trace, the signal line is distributed in a column direction along the display panel, and in a row direction along the display panel, a width of the opening is greater than or equal to a width of the signal line.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate and a first bonding layer on a surface of the first substrate, and the material of first bonding layer includes dielectric materials of silicon, nitrogen and carbon, and an atomic concentration of carbon in the first bonding layer gradually increases along with an increase of thickness of the first bonding layer from the surface of first substrate and reaches a maximum atomic concentration of carbon at a surface of the first bonding layer.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: A method of forming a semiconductor structure, including steps of providing a first substrate, and forming a first bonding layer on a surface of the first substrate, wherein a material of the first bonding layer includes dielectric material of silicon, nitrogen and carbon.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first bonding layer on the surface of first substrate, the material of first bonding layer includes dielectrics such as Si, N and C, and the first bonding layer of semiconductor structure is provided with higher bonding force in wafer bonding.

Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.

Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.

Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.

Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.