Patents by Inventor Jiawen Wang

Jiawen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210000853
    Abstract: Disclosed are a pharmaceutical composition and an application thereof. The pharmaceutical composition of the present invention comprises the following components in parts by weight: 2-20 parts of phenolic acids, 0.5-5 parts of flavonoids, 0.005-0.5 part of tanshinones, 5-20 parts of saponins, and 10-18 parts of volatile oils. The pharmaceutical composition has the functions of protecting against myocardial damage and treating heart failure.
    Type: Application
    Filed: April 4, 2019
    Publication date: January 7, 2021
    Inventors: Shiuiping ZHOU, He SUN, Yiqian ZHANG, Xiaohui MA, Jiawen SHI, Yi HE, Xinxin LI, Jing WANG, Xiaoqing LI, Lijun FAN, Jingjing ZHANG
  • Publication number: 20200410567
    Abstract: The present disclosure relates to an information recommendation device, method, and computer-readable storage medium, and relates to the technical field of computer. The information recommendation device includes: a receiver configured to receive a communication identifier of a contact of a recommended user; a processor configured to acquire a user identifier corresponding to the communication identifier of the contact, and acquire shopping information of the contact according to the user identifier; and a transmitter configured to recommend the shopping information of the contact to the recommended user.
    Type: Application
    Filed: July 9, 2018
    Publication date: December 31, 2020
    Applicants: BEIJING JINGDONG SHANGKE INFORMATION TECHNOLOGY CO., LTD., BEIJING JINGDONG CENTURY TRADING CO., LTD.
    Inventors: Baoyan MA, Shanshan LUO, Xiaoman WANG, Jiawen CHEN, Mianjun XU
  • Patent number: 10818631
    Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.
    Type: Grant
    Filed: April 7, 2019
    Date of Patent: October 27, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Xinsheng Wang, Li Zhang, Gaosheng Zhang, Xianjin Wan, Ziqun Hua, Jiawen Wang, Taotao Ding, Hongbin Zhu, Weihua Cheng, Shining Yang
  • Patent number: 10811380
    Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.
    Type: Grant
    Filed: April 7, 2019
    Date of Patent: October 20, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Xinsheng Wang, Li Zhang, Gaosheng Zhang, Xianjin Wan, Ziqun Hua, Jiawen Wang, Taotao Ding, Hongbin Zhu, Weihua Cheng, Shining Yang
  • Publication number: 20200230118
    Abstract: The present application relates to the use of berberine as shown in formula (I) or an active metabolite thereof and a pharmaceutically acceptable salt thereof in the preparation of a drug for preventing and/or treating phenylketonuria.
    Type: Application
    Filed: March 14, 2018
    Publication date: July 23, 2020
    Applicant: Institute of Materia Medica, Chinese Academy of Medical Sciences
    Inventors: Yan WANG, Jiandong JIANG, Zhenxiong ZHAO, Shurong MA, Jiawen SHOU, Xiaoyang LI
  • Publication number: 20200077076
    Abstract: Scenes can be imaged under low-light conditions using flash photography. However, the flash can be irritating to individuals being photographed, especially when those individuals' eyes have adapted to the dark. Additionally, portions of images generated using a flash can appear washed-out or otherwise negatively affected by the flash. These issues can be addressed by using a flash at an invisible wavelength, e.g., an infrared and/or ultraviolet flash. At the same time a scene is being imaged, at the invisible wavelength of the invisible flash, the scene can also be imaged at visible wavelengths. This can include simultaneously using both a standard RGB camera and a modified visible-plus-invisible-wavelengths camera (e.g., an “IR-G-UV” camera). The visible and invisible image data can then be combined to generate an improved visible-light image of the scene, e.g., that approximates a visible light image of the scene, had the scene been illuminated during daytime light conditions.
    Type: Application
    Filed: September 4, 2018
    Publication date: March 5, 2020
    Inventors: Tianfan Xue, Jian Wang, Jiawen Chen, Jonathan Barron
  • Publication number: 20200006277
    Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.
    Type: Application
    Filed: April 7, 2019
    Publication date: January 2, 2020
    Inventors: Xinsheng WANG, Li ZHANG, Gaosheng ZHANG, Xianjin WAN, Ziqun HUA, Jiawen WANG, Taotao DING, Hongbin ZHU, Weihua CHENG, Shining YANG
  • Publication number: 20200006275
    Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first bonding layer on the surface of first substrate, the material of first bonding layer includes dielectrics such as Si, N and C, and the first bonding layer of semiconductor structure is provided with higher bonding force in wafer bonding.
    Type: Application
    Filed: April 8, 2019
    Publication date: January 2, 2020
    Inventors: Jun CHEN, Ziqun HUA, Siping HU, Jiawen WANG, Tao WANG, Jifeng ZHU, Taotao DING, Xinsheng WANG, Hongbin ZHU, Weihua CHENG, Shining YANG
  • Publication number: 20200006284
    Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.
    Type: Application
    Filed: April 8, 2019
    Publication date: January 2, 2020
    Inventors: Jun CHEN, Ziqun HUA, Siping HU, Jiawen WANG, Tao WANG, Jifeng ZHU, Taotao DING, Xinsheng WANG, Hongbin ZHU, Weihua CHENG, Shining YANG
  • Publication number: 20200006285
    Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.
    Type: Application
    Filed: April 9, 2019
    Publication date: January 2, 2020
    Inventors: Xinsheng WANG, Li ZHANG, Gaosheng ZHANG, Xianjin WAN, Ziqun HUA, Jiawen WANG, Taotao DING, Hongbin ZHU, Weihua CHENG, Shining YANG
  • Publication number: 20200006278
    Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.
    Type: Application
    Filed: April 7, 2019
    Publication date: January 2, 2020
    Inventors: Xinsheng WANG, Li ZHANG, Gaosheng ZHANG, Xianjin WAN, Ziqun HUA, Jiawen WANG, Taotao DING, Hongbin ZHU, Weihua CHENG, Shining YANG
  • Patent number: 10457770
    Abstract: A surfactant and a method of forming the surfactant having the formula (I) where a is an integer from 1 to 10, b is an integer from 0 to 10, R1 is —CH3 or —H, n is an integer from 0 to 20, and R2 is a moiety selected from the group consisting of (II), (III), (IV), (V), (VI), (VII) or (VIII) where m is an integer from 0 to 4. The surfactant can be used in a method for preparing a rigid polyurethane foam.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: October 29, 2019
    Assignee: Dow Global Technologies, LLC
    Inventors: Jiawen Xiong, Dachao Li, Jianxin Zhang, David Hong-fei Guo, Beilei Wang, Wei Liu
  • Patent number: 10169831
    Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: January 1, 2019
    Assignee: Alibaba Group Holding Limited
    Inventor: Jiawen Wang
  • Publication number: 20160358270
    Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.
    Type: Application
    Filed: August 19, 2016
    Publication date: December 8, 2016
    Inventor: Jiawen Wang
  • Patent number: 9426235
    Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.
    Type: Grant
    Filed: July 26, 2011
    Date of Patent: August 23, 2016
    Assignee: Alibaba Group Holding Limited
    Inventor: Jiawen Wang
  • Publication number: 20130117363
    Abstract: This present disclosure discloses techniques for establishing social network service (SNS) relationship. According to the techniques, online payment information of the first user and/or the second user are obtained from the database of the online transaction platform. Using this online payment information, it is determined whether the first user and the second user know each other. If they do, a message to establish an SNS relationship establishment is sent to the first user. The message contains personal information of the second user and allows the first user to decide whether to establish the relationship. The techniques therefore improve security and success rates in establishing SNS relationships.
    Type: Application
    Filed: July 26, 2011
    Publication date: May 9, 2013
    Applicant: ALIBABA GROUP HOLDING LIMITED
    Inventor: Jiawen Wang