Abstract: A sulfinate glycosyl donor of formula I and a method for preparing same as well as use thereof in preparing a glycoside compound including a thioglycoside compound and a carbon glycoside compound are provided. The sulfinate glycosyl donor has a special sulfinate structure. When the sulfinate glycosyl donor is used as a raw material to prepare the glycoside compound, an additional initiator does not need to be added, such that the production cost is saved, the generation of byproducts is reduced, and the glycoside compound with a purity greater than 98% is obtained. The sulfinate glycosyl donor can be used in the preparation of the glycoside compound such as the thioglycoside compound and the carbon glycoside compound.

Abstract: A method for the glycosylation modification of proteins and/or polypeptides uses glycosyl sulfinate as a raw material. The method for glycosylation and modification is applicable not only to proteins and/or peptides containing disulfide bonds, but also to proteins and/or peptides containing sulfhydryl groups. The method is even applicable to proteins and/or peptides containing both disulfide bonds and sulfhydryl groups.

Abstract: In a method for preparing an aryl carbon glycoside compound including a gliflozin drug, a sulfinate glycosyl donor represented by formula W is used as a raw material to prepare the aryl carbon glycoside compound including the gliflozin drug. The method does not need to use an additional initiator.

Abstract: Disclosed are a metal-insulator-metal (MIM) capacitor structure and a method for fabricating the structure. The MIM capacitor structure includes: a substrate; a capacitor structure comprising a bottom metal layer, an interlayer dielectric layer and a top metal layer sequentially stacked over the substrate; an opening extending downward through the top metal layer into the interlayer dielectric layer; a recess located at a side wall of the opening, and extending from a bottom of the opening downward into the interlayer dielectric layer; and a sidewall spacer located in the opening, which extends over a side wall of the top metal layer and downward into the recess so as to fill it up, wherein the interlayer dielectric layer is made of the same material as the sidewall spacer. The MIM capacitor structure and a fabricating method therefor can improve the breakdown voltage of the MIM capacitor structure.

Abstract: There is a provided a pointing device, for example a remote pen which includes a multimode switch or button for transitioning the pointing device between three or more modes of operation. The mode of operation can include a first mode, an annotation mode and an air mouse mode. The remote point device further includes an inertial measurement unit configured for determination orientation information associated with the pointing device, which provides a means for determination of changes in x and y with respect to a cursor associated with a screen of a display device being controlled by the pointing device. The pointing device is further configured to provide different control/display (C/D) gains depending on the action being performed by the pointing device.