Abstract: A weakly paired image style transfer method based on a pose self-supervised generative adversarial network, relating to the field of image processing. The method is suitable for style transfer of weakly paired images, different styles of pictures having certain overlap are used to perform model training of an adversarial neural network, so that the model is insensitive to poses and focuses on style learning, and therefore, in an actual application process, a source style can be converted into a target style, but a pose is kept unchanged. In addition, in the model training process of the adversarial neural network, a differentiable pose solver capable of estimating a relative pose of any two images is introduced, a phase correlation algorithm is optimized to be differentiable, and the phase correlation algorithm is embedded into an end-to-end learning network framework to achieve pose estimation.

Abstract: An ultra-long sub-wavelength grating as an optical antenna for optical phased arrays includes a top structure and a bottom structure which are vertically stacked. The bottom structure is made of a material with a refractive index lower than a refractive index of the top structure. The top structure is made of a material with a refractive index higher than that of the bottom structure. A strip waveguide is disposed in the middle of the top structure. subwavelength blocks are disposed periodically on two sides of the straight strip waveguides. The invention has the following beneficial effects. The structure could increase the effective length of the grating; uniform near field distribution can be achieved by controlling the positions of the subwavelength blocks. The structure is simpler with lower fabrication requirements and lower cost.

Abstract: A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

Abstract: A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.