Abstract: An ultra-long sub-wavelength grating as an optical antenna for optical phased arrays includes a top structure and a bottom structure which are vertically stacked. The bottom structure is made of a material with a refractive index lower than a refractive index of the top structure. The top structure is made of a material with a refractive index higher than that of the bottom structure. A strip waveguide is disposed in the middle of the top structure. subwavelength blocks are disposed periodically on two sides of the straight strip waveguides. The invention has the following beneficial effects. The structure could increase the effective length of the grating; uniform near field distribution can be achieved by controlling the positions of the subwavelength blocks. The structure is simpler with lower fabrication requirements and lower cost.

Abstract: A gate-all-around nanowire device and a method for forming the gate-all-around nanowire device. A first fin and a dielectric layer on the first fin are formed on a substrate. The first fin includes the at least one first epitaxial layer and the at least one second epitaxial layer that are alternately stacked. The dielectric layer exposes a channel region of the first fin. A doping concentration at a lateral surface of the channel region and a doping concentration at a central region of the channel region are different from each other in the at least one second epitaxial layer. After the at least one first epitaxial layer is removed from the channel region, the at least one second epitaxial layer in the channel region serves as at least one nanowire. A gate surrounding the at least one nanowire is formed.

Abstract: A method for manufacturing a stacked gate-all-around nano-sheet CMOS device, including: providing a substrate with a fin structure, where a channel layer for an NMOS is a sacrificial layer for a PMOS, a channel layer for the PMOS is a sacrificial layer for the NMOS; and mobility of holes in the second material is greater than mobility of holes in the first material; forming a dummy gate stack extending across the fin structure; forming source-or-drain regions in the fin structure at two sides of the dummy gate stack; removing the dummy gate stack and the sacrificial layers covered by the dummy gate stack, to expose a surface of a part of the channel layer that is located between the source-or-drain regions, where a nano-sheet array is formed by the channel layer with the exposed surface; and forming a gate stack structure surrounding each nano sheet in the nano-sheet array.

Abstract: A method for manufacturing a stacked gate-all-around nano-sheet CMOS device, including: providing a substrate with a fin structure, where a channel layer for an NMOS is a sacrificial layer for a PMOS, a channel layer for the PMOS is a sacrificial layer for the NMOS; and mobility of holes in the second material is greater than mobility of holes in the first material; forming a dummy gate stack extending across the fin structure; forming source-or-drain regions in the fin structure at two sides of the dummy gate stack; removing the dummy gate stack and the sacrificial layers covered by the dummy gate stack, to expose a surface of a part of the channel layer that is located between the source-or-drain regions, where a nano-sheet array is formed by the channel layer with the exposed surface; and forming a gate stack structure surrounding each nano sheet in the nano-sheet array.

Abstract: The present invention provides an automatic jet breaking tool for solid fluidization exploitation of natural gas hydrate, which mainly includes an upper joint, an outer cylinder, an inner sliding sleeve, a lockup sliding sleeve, a thrust bearing, a spring, a jet joint, a telescopic jet sprinkler, a plug block and an extrusion seal ring. The present invention mainly adopts the principle of throttling control pressure to control the position of the inner sliding sleeve by controlling a flow rate of a drilling fluid, so as to turn on and turn off the jet breaking tool. The application of the present invention can realize automatic jet breaking of solid fluidization exploitation of the natural gas hydrate, reduce procedures of a round trip operation, and effectively improve the efficiency and safety of the exploitation operation of the natural gas hydrate.

Abstract: The present invention provides an automatic jet breaking tool for solid fluidization exploitation of natural gas hydrate, which mainly includes an upper joint, an outer cylinder, an inner sliding sleeve, a lockup sliding sleeve, a thrust bearing, a spring, a jet joint, a telescopic jet sprinkler, a plug block and an extrusion seal ring. The present invention mainly adopts the principle of throttling control pressure to control the position of the inner sliding sleeve by controlling a flow rate of a drilling fluid, so as to turn on and turn off the jet breaking tool. The application of the present invention can realize automatic jet breaking of solid fluidization exploitation of the natural gas hydrate, reduce procedures of a round trip operation, and effectively improve the efficiency and safety of the exploitation operation of the natural gas hydrate.

Abstract: A gate-all-around nanowire device and a method for forming the gate-all-around nanowire device. A first fin and a dielectric layer on the first fin are formed on a substrate. The first fin includes the at least one first epitaxial layer and the at least one second epitaxial layer that are alternately stacked. The dielectric layer exposes a channel region of the first fin. A doping concentration at a lateral surface of the channel region and a doping concentration at a central region of the channel region are different from each other in the at least one second epitaxial layer. After the at least one first epitaxial layer is removed from the channel region, the at least one second epitaxial layer in the channel region serves as at least one nanowire. A gate surrounding the at least one nanowire is formed.