Patents by Inventor Jiayin Huang
Jiayin Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230214552Abstract: The invention provides a method and a device for judging the printability of food materials, and the method includes the following: acquire the plasticity of the food materials to be judged; acquire the measured values of each of the influencing factors of the 3D printing effect of food materials to be judged; and acquire the first correlation value between the plasticity and each of the influencing factors and the second correlation value between each of the influencing factors; in addition, acquire the maximum influencing factor of the 3D printing effect of food materials to be judged, and normalize the measured values according to the measured value of the maximum influencing factor and the second correlation value; what's more, construct a judging model. And the invention can accurately judge the printability of the same food materials under different conditions by specific numerical values.Type: ApplicationFiled: November 16, 2022Publication date: July 6, 2023Inventors: Yaqin Hu, Gaoshang Li, Zhiheng Hu, Lingping Hu, Jiayin Huang, Yuanzhe Xu, Yu Song
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Publication number: 20220332621Abstract: A porous biological polymerizing agent for sediment dewatering in environmental dredging of rivers and lakes is disclosed, which is obtained by thoroughly mixing 50 wt % to 70 wt % of an agent A and 30 wt % to 50 wt % of an agent B into irregular spheres of 1 mm to 3 mm, and crushing the irregular spheres into solid particles with a particle size of ?20 mesh, and the solid particles have a pH of 5.0 to 6.0. The agent A is obtained by thoroughly mixing 10 wt % to 30 wt % of cellulose, 20 wt % to 50 wt % of starch, and 20 wt % to 40 wt % of amino acid; and the agent B is obtained by thoroughly mixing 40 wt % to 70 wt % of saccharifying enzyme (SE) and 30 wt % to 60 wt % of citric acid.Type: ApplicationFiled: November 10, 2020Publication date: October 20, 2022Applicant: CCCC (TIANJIN) ECO-ENVIRONMENTAL PROTECTION DESIGN & RESEARCH INSTITUTE CO., LTD.Inventors: Baoan HU, Jiayin HUANG, Xianfeng DONG
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Patent number: 11291127Abstract: A hand controller has a housing, the housing provided with a plurality of convex keys, wherein the housing has an outside wall provided with a first engagement portion; a cover plate, being in a snap connection with the housing; and a connection assembly, the connection assembly provided with a second engagement portion which is in an engagement connection with the first engagement portion, wherein the engagement between the first engagement portion and the second engagement portion drives the connection assembly to move up and down along the thickness direction of the housing, and the connection assembly is provided with a connection portion, wherein the connection portion is connected with the installation position of the hand controller via a fastener. The hand controller can apply to mounting desks of different thicknesses and improve the universality of the hand controller.Type: GrantFiled: May 21, 2020Date of Patent: March 29, 2022Assignee: NINGBO WISTOPHT TECHNOLOGY CO., LTDInventors: Jiayin Huang, Hongbin Lu, Jinyi Li, Enjie Ruan, Xingliang Chen
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Publication number: 20210212220Abstract: A hand controller has a housing, the housing provided with a plurality of convex keys, wherein the housing has an outside wall provided with a first engagement portion; a cover plate, being in a snap connection with the housing; and a connection assembly, the connection assembly provided with a second engagement portion which is in an engagement connection with the first engagement portion, wherein the engagement between the first engagement portion and the second engagement portion drives the connection assembly to move up and down along the thickness direction of the housing, and the connection assembly is provided with a connection portion, wherein the connection portion is connected with the installation position of the hand controller via a fastener. The hand controller can apply to mounting desks of different thicknesses and improve the universality of the hand controller.Type: ApplicationFiled: May 21, 2020Publication date: July 8, 2021Inventors: Jiayin HUANG, Hongbin LU, Jinyi LI, Enjie RUAN, Xingliang CHEN
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Patent number: 10796922Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.Type: GrantFiled: October 28, 2019Date of Patent: October 6, 2020Assignee: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Patent number: 10707061Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.Type: GrantFiled: April 28, 2017Date of Patent: July 7, 2020Assignee: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Patent number: 10593523Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.Type: GrantFiled: April 26, 2016Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Publication number: 20200058516Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.Type: ApplicationFiled: October 28, 2019Publication date: February 20, 2020Applicant: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Patent number: 10490418Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.Type: GrantFiled: April 19, 2018Date of Patent: November 26, 2019Assignee: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Patent number: 10319603Abstract: Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.Type: GrantFiled: October 24, 2017Date of Patent: June 11, 2019Assignee: Applied Materials, Inc.Inventors: Zhijun Chen, Jiayin Huang, Anchuan Wang, Nitin Ingle
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Patent number: 10283324Abstract: Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.Type: GrantFiled: October 24, 2017Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Zhijun Chen, Anchuan Wang, Jiayin Huang
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Publication number: 20190122865Abstract: Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.Type: ApplicationFiled: October 24, 2017Publication date: April 25, 2019Applicant: Applied Materials, Inc.Inventors: Zhijun Chen, Anchuan Wang, Jiayin Huang
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Patent number: 10204795Abstract: A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.Type: GrantFiled: April 12, 2016Date of Patent: February 12, 2019Assignee: Applied Materials, Inc.Inventors: Jiayin Huang, Lin Xu, Zhijun Chen, Anchuan Wang
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Patent number: 10186428Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.Type: GrantFiled: September 18, 2017Date of Patent: January 22, 2019Assignee: Applied Materials, Inc.Inventors: Lin Xu, Zhijun Chen, Jiayin Huang, Anchuan Wang
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Patent number: 10128086Abstract: Exemplary methods for treating a silicon-containing substrate may include flowing plasma effluents of a hydrogen-containing precursor into a processing region of the semiconductor processing chamber. A silicon-containing substrate may be positioned within the processing region and include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide exposing a portion of the silicon-containing substrate. The methods may include contacting the exposed portion of the silicon-containing substrate with the plasma effluents. The methods may include flowing an oxygen-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the exposed portion of the silicon-containing substrate with the oxygen-containing precursor. The methods may also include converting the exposed portion of the silicon-containing substrate to silicon oxide.Type: GrantFiled: October 24, 2017Date of Patent: November 13, 2018Assignee: Applied Materials, Inc.Inventors: Jiayin Huang, Zhijun Chen, Anchuan Wang, Nitin Ingle
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Patent number: 10062579Abstract: Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.Type: GrantFiled: October 7, 2016Date of Patent: August 28, 2018Assignee: Applied Materials, Inc.Inventors: Zhijun Chen, Jiayin Huang, Anchuan Wang, Nitin Ingle
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Publication number: 20180240654Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.Type: ApplicationFiled: April 19, 2018Publication date: August 23, 2018Applicant: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Patent number: 9991134Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.Type: GrantFiled: April 7, 2014Date of Patent: June 5, 2018Assignee: Applied Materials, Inc.Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
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Publication number: 20180138055Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.Type: ApplicationFiled: September 18, 2017Publication date: May 17, 2018Applicant: Applied Materials, Inc.Inventors: Lin Xu, Zhijun Chen, Jiayin Huang, Anchuan Wang
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Patent number: 9966240Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.Type: GrantFiled: October 14, 2014Date of Patent: May 8, 2018Assignee: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang