Patents by Inventor Jiaying Ke

Jiaying Ke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260243920
    Abstract: A method for identifying icing zones of typical micro-terrain and micro-climate on transmission lines, including: Step 1, generating a DEM map with a range of 1.5 km×1.5 km centered on the tower's latitude and longitude; Step 2, filtering the DEM map; Step 3, extracting typical terrain feature factors of the icing zone using the maximum gradient algorithm based on the DEM map obtained in Step 2; Step 4, performing basic calculations based on the terrain feature factors in Step 3; Step 5, analyzing the terrain features to propose quantitative values applicable to each micro-terrain and micro-climate zone, determining whether there are high mountain watersheds, terrain uplift, mountain passes, canyon wind corridors, and increased water vapor; thus solving the problem of identifying icing conditions in different types of micro-terrain and micro-climate transmission lines.
    Type: Application
    Filed: April 9, 2026
    Publication date: August 20, 2026
    Applicants: State Grid Henan Electric Power Research institute, Chongqing Dige Technology Co., Ltd.
    Inventors: Degui Yao, Jinyu Wang, Xingliang Jiang, Zhe Li, Guolin Yang, Jiaying Ke, Lina Dong, Yun Liang, Lu Zhang, Kai Pang, Chao Wang, Ming Lu, Sikun Yuan, Yang Gao, Shuai Li, Jingjing Cui, Zhuojun Li
  • Patent number: 12031229
    Abstract: Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: July 9, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
  • Patent number: 11873575
    Abstract: Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: January 16, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
  • Publication number: 20230083235
    Abstract: Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.
    Type: Application
    Filed: November 21, 2022
    Publication date: March 16, 2023
    Inventors: Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
  • Publication number: 20220170176
    Abstract: Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.
    Type: Application
    Filed: October 7, 2021
    Publication date: June 2, 2022
    Inventors: Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson