Abstract: A global shutter image sensor with improved pixel failure coverage detects failures caused by the pixel chip of the image sensor. The global shutter image sensor includes a pixel chip including an array of photodiodes and associated logic, and a logic chip, bonded to the pixel chip, including an array of logic blocks for processing the images detected by the photodiodes. A failure detection circuit coupled to a reference voltage node of the image sensor detects a failure in the pixel chip by capturing a first level of pixel bias current and a second level of pixel bias current wherein a difference between the first level and the second level drives an output of the failure detection circuit either as logic high or as logic low.

Abstract: An effective capacity estimation method and system for super capacitor energy storage systems are provided. The method includes: establishing a nonlinear electrical model of supercapacitor cell and an equivalent electrical model of a supercapacitor system; obtaining the first test data by charging the supercapacitor cell; based on the first test data, setting the initial value of parameters of the nonlinear electrical model of the supercapacitor cell by a preset algorithm; using a least-square method to identify the parameters of the nonlinear electrical model of the supercapacitor cell; obtaining electrical parameters of the equivalent electrical model of the supercapacitor system except the connection resistance parameters, carrying out a charging test of the supercapacitor system to obtain the connection resistance parameters, and estimating an effective capacity of the supercapacitor energy storage system based on the equivalent electrical model of the supercapacitor system after parameter identification.

Abstract: The present disclosure provides an ion trap apparatus and a saddle point moving method for the ion trap apparatus. The ion trap apparatus comprises: an insulating base material, the insulating base material being a concave structure; and at least two segments of arc-shaped metal reflective electrodes, wherein the arc-shaped metal reflective electrodes cover the front side of the insulating base material, the front side being a concave surface; each segment of the arc-shaped metal reflective electrodes is electrically insulated; and each segment of the arc-shaped metal reflective electrodes is used to receive a radio frequency voltage which has the same frequency, the same phase and an adjustable amplitude. The apparatus may achieve ideal imaging while improving the light collection efficiency, thereby improving the success rate of the preparation of ion-photon entangled states.

Abstract: An image sensor includes pixel circuitry with a photodiode to receive light and output a pixel signal. The image sensor also includes readout circuitry with a first sample and hold transistor coupled to the pixel circuitry, and a first capacitor coupled to the first sample and hold transistor to receive the pixel signal. A second sample and hold transistor is coupled to the pixel circuitry, and a second capacitor is coupled to the second sample and hold transistor to receive the pixel signal. A first output switch is coupled to output the pixel signal from the first capacitor, and a second output switch is coupled to output the pixel signal from the second capacitor. A boost transistor is coupled to connect the first output switch and the second output switch when the boost transistor is turned on.

Abstract: An image sensor includes pixel circuitry with a photodiode to receive light and output a pixel signal. The image sensor also includes readout circuitry with a first sample and hold transistor coupled to the pixel circuitry, and a first capacitor coupled to the first sample and hold transistor to receive the pixel signal. A second sample and hold transistor is coupled to the pixel circuitry, and a second capacitor is coupled to the second sample and hold transistor to receive the pixel signal. A first output switch is coupled to output the pixel signal from the first capacitor, and a second output switch is coupled to output the pixel signal from the second capacitor. A boost transistor is coupled to connect the first output switch and the second output switch when the boost transistor is turned on.