Abstract: The present disclosure discloses a high-bandwidth double data rate (DDR) dual-in-line memory module (DIMM), a memory system, and an operation method of the memory system.

Abstract: A manufacturing method for memory includes providing a substrate; forming a first isolation layer on the substrate; forming a first mask layer on the first isolation layer; forming a second isolation layer on the first mask layer and part of the first isolation layer; forming a second mask layer on the second isolation layer; removing part of the second mask layer and part of the second isolation layer; removing the first mask layer and the remaining second mask layer; forming a third mask layer on the first isolation layer and the remaining second isolation layer; removing part of the third mask layer; and etching the remaining part of the second isolation layer and the first isolation layer below the second isolation layer, by taking the remaining third mask layer as a mask.

Abstract: The present disclosure discloses a high-bandwidth double data rate (DDR) dual-in-line memory module (DIMM), a memory system, and an operation method of the memory system.

Abstract: A manufacturing method for memory includes providing a substrate; forming a first isolation layer on the substrate; forming a first mask layer on the first isolation layer; forming a second isolation layer on the first mask layer and part of the first isolation layer; forming a second mask layer on the second isolation layer; removing part of the second mask layer and part of the second isolation layer; removing the first mask layer and the remaining second mask layer; forming a third mask layer on the first isolation layer and the remaining second isolation layer; removing part of the third mask layer; and etching the remaining part of the second isolation layer and the first isolation layer below the second isolation layer, by taking the remaining third mask layer as a mask.

Abstract: A method for manufacturing a semiconductor structure includes: providing a substrate, a first mask and a second mask, etching the substrate by respectively using the first mask and the second mask, so as to form first grooves and second grooves on the substrate, wherein regions, in the substrate, where the first grooves and the second grooves are located form bit line grooves; and forming a conductive layer in each of the bit line grooves.

Abstract: The present disclosure provides a rework device and a rework method useful in reworking a shingle cell module. The rework device includes a first supporting component, a second supporting component and a heating component disposed between the first supporting component and the second supporting component and being flush with the second supporting component. The first supporting component is inclined at an angle with respect to the heating component. This type of rework device and rework method has the advantages of simple structure, low cost and convenient operation.

Abstract: A compound of Formula I: is disclosed. A method of preparing the compound of Formula I is also disclosed. R is alkyl, haloalkyl, aryl, or substituted aryl.

Abstract: Apparatus to implement several high performance phase interpolators are disclosed. Some embodiments are directed to a full-wave integrating phase interpolation core comprising two pairs of in-phase and quadrature-phase current DACs arranged in a cascode architecture to drive an integrating capacitor and produce an interpolation voltage waveform. The current DACs are biased, weighted, and controlled by in-phase and quadrature-phase input clocks to yield an interpolation waveform that presents a phase value between the phases of the input clocks. Some embodiments deploying the interpolator core use feedback circuitry and reference voltages to adjust the common mode and amplitude of the interpolation voltage waveform to obtain both optimal performance and operation within the interpolator linear region or output compliance range.

Abstract: Apparatus to implement several high performance phase interpolators are disclosed. Some embodiments are directed to a full-wave integrating phase interpolation core comprising two pairs of in-phase and quadrature-phase current DACs arranged in a cascode architecture to drive an integrating capacitor and produce an interpolation voltage waveform. The current DACs are biased, weighted, and controlled by in-phase and quadrature-phase input clocks to yield an interpolation waveform that presents a phase value between the phases of the input clocks. Some embodiments deploying the interpolator core use feedback circuitry and reference voltages to adjust the common mode and amplitude of the interpolation voltage waveform to obtain both optimal performance and operation within the interpolator linear region or output compliance range.

Abstract: Apparatus to implement several high performance phase interpolators are disclosed. Some embodiments are directed to a full-wave integrating phase interpolation core comprising two pairs of in-phase and quadrature-phase current DACs arranged in a cascode architecture to drive an integrating capacitor and produce an interpolation voltage waveform. The current DACs are biased, weighted, and controlled by in-phase and quadrature-phase input clocks to yield an interpolation waveform that presents a phase value between the phases of the input clocks. Some embodiments deploying the interpolator core use feedback circuitry and reference voltages to adjust the common mode and amplitude of the interpolation voltage waveform to obtain both optimal performance and operation within the interpolator linear region or output compliance range.

Abstract: Apparatus to implement several high performance phase interpolators are disclosed. Some embodiments are directed to a full-wave integrating phase interpolation core comprising two pairs of in-phase and quadrature-phase current DACs arranged in a cascode architecture to drive an integrating capacitor and produce an interpolation voltage waveform. The current DACs are biased, weighted, and controlled by in-phase and quadrature-phase input clocks to yield an interpolation waveform that presents a phase value between the phases of the input clocks. Some embodiments deploying the interpolator core use feedback circuitry and reference voltages to adjust the common mode and amplitude of the interpolation voltage waveform to obtain both optimal performance and operation within the interpolator linear region or output compliance range.

Abstract: Apparatus to implement several high performance phase interpolators are disclosed. Some embodiments are directed to a full-wave integrating phase interpolation core comprising two pairs of in-phase and quadrature-phase current DACs arranged in a cascode architecture to drive an integrating capacitor and produce an interpolation voltage waveform. The current DACs are biased, weighted, and controlled by in-phase and quadrature-phase input clocks to yield an interpolation waveform that presents a phase value between the phases of the input clocks. Some embodiments deploying the interpolator core use feedback circuitry and reference voltages to adjust the common mode and amplitude of the interpolation voltage waveform to obtain both optimal performance and operation within the interpolator linear region or output compliance range.