Abstract: A method for preparing a tungsten sulfide thin film is provided. The method includes the steps of: applying a one-atom-thick W layer on a silicon substrate; applying a one-atom-thick S layer on the W layer; and applying another one-atom-thick W layer on the S layer, to obtain a thin film that is a single-layer thin film having a W—S—W layered structure.

Abstract: The present invention relates to the technical field of inorganic nanofilm materials, and provides a method for preparing a tungsten sulfide thin film. The method comprises the steps of: applying a one-atom-thick W layer on a silicon substrate; applying a one-atom-thick S layer on the W layer; and applying another one-atom-thick W layer on the S layer, to obtain a thin film that is a single-layer thin film having a W—S—W layered structure. The present invention further provides a tungsten sulfide thin film prepared through the method. By means of the method according to the present invention, large-area preparation of the W—S—W thin film is realized, and the quality of the prepared W—S—W thin film is considerably improved, which greatly improves the electrical performance of the W—S—W thin film.