Patents by Inventor Jie-Chun Luo

Jie-Chun Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistance-integrated gas sensor
    Patent number: 11573193
    Abstract: A resistance-integrated gas sensor is provided, including a substrate, a first metal oxide layer, an insulating layer, a contact metal layer, a contact hole, a second metal oxide layer, and an interdigitated electrode layer. The first metal oxide layer is disposed in the substrate. The insulating layer is disposed on the substrate and the first metal oxide layer. The contact metal layer and the contact hole are disposed in the insulating layer. The second metal oxide layer is disposed on the insulating layer. A portion of the interdigitated electrode layer is disposed on the insulating layer, and another portion is disposed in the second metal oxide layer. The contact metal layer and the contact hole connect the first metal oxide layer and the interdigitated electrode layer.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: February 7, 2023
    Assignee: Nuvoton Technology Corporation
    Inventor: Jie-Chun Luo
  • RESISTANCE-INTEGRATED GAS SENSOR
    Publication number: 20200200695
    Abstract: A resistance-integrated gas sensor is provided, including a substrate, a first metal oxide layer, an insulating layer, a contact metal layer, a contact hole, a second metal oxide layer, and an interdigitated electrode layer. The first metal oxide layer is disposed in the substrate. The insulating layer is disposed on the substrate and the first metal oxide layer. The contact metal layer and the contact hole are disposed in the insulating layer. The second metal oxide layer is disposed on the insulating layer. A portion of the interdigitated electrode layer is disposed on the insulating layer, and another portion is disposed in the second metal oxide layer. The contact metal layer and the contact hole connect the first metal oxide layer and the interdigitated electrode layer.
    Type: Application
    Filed: October 8, 2019
    Publication date: June 25, 2020
    Applicant: Nuvoton Technology Corporation
    Inventor: Jie-Chun Luo