Abstract: The present disclosure provides a method and system for efficiently and securely managing human motion data. In one aspect, a human-motion-data-managing system first receives a sequence of video images including a first person. Next, for each image in the sequence of video images, the human-motion-data-managing system detects the first person in the video image; and subsequently extracts a skeleton figure of the detected first person from the image, wherein the skeleton figure is composed of a set of human keypoints. Next, human-motion-data-managing system combines a sequence of extracted skeleton figures of the detected first person from the sequence of video images to form a skeleton sequence of the detected first person which depicts a continuous motion of the first person. The human-motion-data-managing system subsequently transmits the skeleton sequence to a server in place of the actual images of the first person to preserve the privacy of the first person.

Abstract: A computer-implemented method includes identifying a webpage comprising a set of user interface (UI) elements, analyzing the set of user UI elements to identify a set of interactable elements, classifying the elements of the set interactable elements as either focusable or not focusable, extracting features from source code corresponding to interactable elements of the set of interactable elements classified as focusable, and building an accessibility issue detection model using the extracted features from source code corresponding to focusable interactable elements as training data. The method may further include extracting features from source code corresponding to interactable elements classified as not focusable and updating the accessibility issue detection model using the extracted features from source code corresponding to interactable elements which are not focusable as training data.

Abstract: A bit line of a semiconductor device includes a first interlayer dielectric film disposed on a semiconductor substrate, a plurality of bit line stacks disposed on the first interlayer dielectric film, a plurality of bit line spacers disposed on side walls of the bit line stacks, and a buffer film disposed on the bit line spacers, the first interlayer dielectric film and the bit line stacks; and a method for fabricating the same.

Abstract: Disclosed herein is a method for forming an interlayer dielectric film in a semiconductor device. The method comprises the steps of preparing a semiconductor substrate having a dielectric film and conductive film patterns sequentially deposited thereon, and depositing a high plasma oxide film as the interlayer dielectric film on the conductive film patterns and the dielectric films by supplying H2 as an adding gas together with a source gas. A dangling bond in an interface of the semiconductor substrate is reduced by adding hydrogen into the dielectric film, thereby enhancing the uniformity of the deposition. Moreover, hydrogen in the dielectric film decreases current leakage occurring in the gate by preventing electrons in the plasma from flowing into a gate through the bit-line, thereby enhancing the refresh characteristics of the semiconductor device.