Abstract: Provided are a method for driving a display panel, and a display device. The method includes: obtaining a gray scale value of each sub-pixels in a current row and a gray scale value of each sub-pixels in a previous row; determining a target gray scale value of each sub-pixel in the current row according to the gray scale value of each sub-pixel in the current row, the gray scale value of each sub-pixel in the previous row, and a target compensation value in a predetermined target compensation lookup table; and inputting a data voltage into a data line in the display panel according to the target gray scale value of each sub-pixel in the current row, to charge with a corresponding data voltage to each sub-pixel in the current row.

Abstract: A communication method of a communication terminal and an electronic device are disclosed. The communication method comprises: in response to the communication terminal entering a predetermined mode, detecting a state of Radio Resource Control (RRC) of the communication terminal; in response to the communication terminal being in a RRC idle state, making the communication terminal enter and keep in a RRC connection state, and prohibiting the communication terminal from entering a discontinuous reception DRX state; in response to the communication terminal being in the RRC connection state, keeping the communication terminal in the RRC connection state; and receiving and/or sending service data of an application installed on the communication terminal in the RRC connection state.

Abstract: A method for autonomous resource selection by a user equipment (UE). The method includes obtaining a sidelink resource set, a number of current UEs and a first user identifier (ID) from a network, the number of current UEs corresponding to UEs currently participating in sidelink transmission in a serving cell, assigning a plurality of sequence numbers to a plurality of resource units among the sidelink resource set, selecting a subset of the plurality of resource units as sidelink resources of the UE based on the number of current UEs and the first user ID, the subset of the plurality of resource units having particular sequence numbers from among the plurality of sequence numbers, and transmitting a communication signal using the sidelink resources of the UE.

Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Abstract: Disclosed is a SARS-CoV-2 vaccine, wherein the S protein of SARS-CoV-2 serves as the antigen, and the vaccine comprises an adenoviral vector, and the vaccine induces an improved protective immune response through mucosal immunity, thus preventing SARS-CoV-2 infection. Specifically, when atomized by an appropriate apparatus, the vaccine generates particles of improved uniformity, which can reach the lungs after being inhaled via the nasal cavity or the oral cavity, thus producing a protective immune response with respect to the entire respiratory tract and the lungs, enhancing the effective utilization rate of the vaccine, and increasing the effect of the vaccine.

Abstract: Disclosed in the present invention are a pyrazolo [1,5-a]pyrimidine derivative having a structure of formula (I), a pharmaceutical composition comprising the compound of formula (I), and use of the compound in the preparation of a medicament for preventing or treating diseases associated with tropomyosin receptor kinases, in particular for preventing or treating cancers associated with tropomyosin receptor kinases. Each substituent in formula (I) has the same definition as that in the description.

Abstract: Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.

Abstract: A method of fabricating an optical lens disclosed herein includes forming a layer of a flat lens structure on a front surface of a substrate, depositing a protective metal layer on the layer of the flat lens structure and on a back surface of the substrate, wherein the protective layer includes chromium, gold, titanium, or nickel, wherein the back surface is located opposite to and away from the front surface having the layer of the flat lens structure, irradiating the protective metal layer at the front surface with a laser to form a channel (i) through the protective metal layer, (ii) through the layer of the flat lens structure and (iii) in the substrate, removing the protective metal layer at the front surface and the back surface of the substrate, and separating the layer of the flat lens structure from the substrate to obtain the optical lens, wherein the channel has a depth defined by a thickness of the substrate remaining at the channel after irradiating the protective metal layer at the front surface

Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Abstract: An ore dressing process for medium-grade and low-grade mixed collophanite includes the following steps: S1; crushing ores to obtain crushed ores; S2: screening the crushed ores to obtain fine-fraction ores and coarse-fraction ores divided into at least two size fractions; S3: performing a photoelectric separation to the coarse-fraction ores of different size fractions to obtain photoelectric separation concentrates and photoelectric separation tailings of each size fraction; S4: combining the photoelectric separation concentrates of the each size fraction to obtain pre-enriched concentrates; S5: combining the fine-fraction ores and the pre-enriched concentrates, and then performing an ore grinding to obtain minerals to be separated; S6: adding water to the minerals to be separated to obtain a floatation pulp, and then performing a floatation to obtain phosphate concentrates and tailings.

Abstract: The present disclosure provides a two-dimensional material detector with an asymmetrically integrated optical microstrip antenna, structurally including a metal reflecting surface, a dielectric spacer layer, a two-dimensional active material layer, a top source electrode, and a drain electrode integrated with a metal strip array. Self-driven photoresponse of a metal/two-dimensional material/metal structure is induced by a Schottky junction formed due to contact between the two-dimensional material and the metal. The asymmetrically integrated optical microstrip antennas break the symmetry between the two contact/two-dimensional material junctions. Light absorption in the contact/two-dimensional material junction integrated with optical patch antennas is significantly enhanced by efficient light in-coupling and intensified light localization; meanwhile, the extended boundary of the contact/two-dimensional material junction enlarges the photocurrent collection area.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: Disclosed in the present invention are a pyrazolo [1,5-a]pyrimidine derivative having a structure of formula (I), a pharmaceutical composition comprising the compound of formula (I), and use of the compound in the preparation of a medicament for preventing or treating diseases associated with tropomyosin receptor kinases, in particular for preventing or treating cancers associated with tropomyosin receptor kinases. Each substituent in formula (I) has the same definition as that in the description.

Abstract: Aspects disclosed herein include circuits employing a double diffusion break (DDB) and a single diffusion break (SDB) in different type diffusion regions, and related fabrication methods are disclosed. In exemplary aspects disclosed herein, either a DDB or a SDB is formed in the N-type diffusion region(s) and the opposing type diffusion, either a SDB or DDB, is formed in the P-type diffusion region(s). Forming different diffusion breaks between a DDB and a SDB in different diffusion regions of the circuit can be employed to induce channel strain that will increase carrier mobility of either P-type or N-type semiconductor devices formed in respective P-type or N-type diffusion region(s), while avoiding or reducing such induced channel strain in either P-type or N-type semiconductor devices formed in respective P- or N-type diffusion region(s) that may degrade carrier mobility.

Abstract: An apparatus includes at least one first device having a first contacted poly pitch (CPP) and a first contact. The first contact has a first contact size. The apparatus also includes at least one second device having a second CPP, a second contact, and a contact liner. The second CPP is larger than the first CPP. The second contact size is constrained by the contact liner, such that the contact liner reduces a contact opening for the second contact.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A semiconductor device includes a contact via and a metal interconnect on the contact via. The metal interconnect has a portion extending in a lengthwise direction that is wrapped around and in contact with a sidewall of the contact via. Along a widthwise direction, the metal interconnect does not contact the sidewall of the contact via.