Patents by Inventor Jie Jie

Jie Jie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for driving motor and appliance
    Patent number: 9887651
    Abstract: A method and apparatus for driving motor and appliance. When a rotor of a motor rotates, a current angle of the rotor is detected at a current moment by using a Hall sensor; a back electromotive force and a phase current of the motor is detected at the current moment; a target torque coefficient is detected by using a relational model for a back electromotive force and a torque coefficient according to the back electromotive force; a current torque coefficient is detected by using a relational model for a phase current and a torque coefficient according to the detected phase current; and a compensation angle is detected according to a rotor angle compensation model and the current angle is compensated by using the compensation angle, to obtain an adjustment angle; and power supply to the motor is adjusted according to the adjustment angle by using a field orientation technology.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: February 6, 2018
    Assignee: Guangdong Welling Motor Manufacturing Co., Ltd.
    Inventors: Yanchao Fu, Zhiqiang Ge, Jie Jie, Xiaoan Zhao, Liming Gong
  • Method and Apparatus for Driving Motor and Appliance
    Publication number: 20170272010
    Abstract: The present invention is applicable to the motor field, and provides a method and apparatus for driving motor and appliance.
    Type: Application
    Filed: August 21, 2014
    Publication date: September 21, 2017
    Inventors: Yanchao Fu, Zhiqiang Ge, Jie Jie, Xiaoan Zhao, Liming Gong
  • Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing
    Patent number: 7199032
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: April 3, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Duofeng Yue, Peijun J. Chen, Sue Ellen Crank, Thomas D. Bonifield, Jiong-Ping Lu, Jie-Jie Xu
  • Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing
    Publication number: 20060024935
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
    Type: Application
    Filed: July 30, 2004
    Publication date: February 2, 2006
    Applicant: Texas Instruments Incorporated
    Inventors: Duofeng Yue, Peijun Chen, Sue Crank, Thomas Bonifield, Jiong-Ping Lu, Jie-Jie Xu