Abstract: Disclosed are a spherical steel bearing, an intelligent bearing and a bearing monitoring system, belonging to the technical field of bearings. The spherical steel bearing comprises a top bearing plate, a bottom bearing plate, a spherical steel plate and a base plate, wherein the base plate are stacked together with the top bearing plate or the bottom bearing plate. A pressure sensing unit is arranged between the top bearing plate and the base plate or between the bottom bearing plate and the base plate. The intelligent bearing includes a data acquisition unit, a data output unit and the spherical steel bearing, the data acquisition unit transmitting the bearing pressure measured by the pressure sensing unit to the data output unit. The bearing monitoring system includes a data acquisition unit, a data output unit, a monitoring center and the spherical steel bearing.

Abstract: Disclosed are a pot rubber bearing, an intelligent bearing and a bearing monitoring system. The pot rubber bearing comprises a top bearing plate, a steel pot, a rubber plate and a base plate, wherein the base plate is stacked with the top bearing plate or the steel pot. A pressure sensing unit is arranged between the top bearing plate and the base plate or between the steel pot and the base plate. The intelligent bearing includes a data acquisition unit, a data output unit and the pot rubber bearing, the data acquisition unit transmits the bearing pressure measured by the pressure sensing unit to the data output unit. The bearing monitoring system includes a data acquisition unit, a data output unit, a monitoring center and the pot rubber bearing.

Abstract: A self-balanced diode device includes a substrate, a doped well, at least one first conductivity type heavily doped fin and at least two second conductivity type heavily doped fins. The doped well is arranged in the substrate. The first conductivity type heavily doped fin is arranged in the doped well, arranged in a line along a first direction, and protruded up from a surface of the substrate. The second conductivity type heavily doped fins is arranged in the doped well, arranged in a line along a second direction intersecting the first direction, respectively arranged at two opposite sides of the first conductivity type heavily doped fin, and protruded up from the surface of the substrate. Each second conductivity type heavily doped fin and the first conductivity type heavily doped fin are spaced at a fixed interval.

Abstract: Disclosed are a lead core rubber seismic isolation bearing, an intelligent bearing and a bearing monitoring system, belonging to the technical field of bearings. The lead core rubber seismic isolation bearing comprises a top bearing plate, a bottom bearing plate, a lead core rubber bearing body and a base plate, wherein pressure sensing units are arranged between the top bearing plate and the base plate, or between the bottom bearing plate and the base plate. The intelligent bearing includes a data acquisition unit, a data output unit and the lead core rubber seismic isolation bearing, the data acquisition unit transmitting the bearing pressure measured by the pressure sensing unit to the data output unit. The bearing monitoring system includes a data acquisition unit, a data output unit, a monitoring center and the lead core rubber seismic isolation bearing.

Abstract: A self-balanced diode device includes a substrate, a doped well, at least one first conductivity type heavily doped fin and at least two second conductivity type heavily doped fins. The doped well is arranged in the substrate. The first conductivity type heavily doped fin is arranged in the doped well, arranged in a line along a first direction, and protruded up from a surface of the substrate. The second conductivity type heavily doped fins is arranged in the doped well, arranged in a line along a second direction intersecting the first direction, respectively arranged at two opposite sides of the first conductivity type heavily doped fin, and protruded up from the surface of the substrate. Each second conductivity type heavily doped fin and the first conductivity type heavily doped fin are spaced at a fixed interval.

Abstract: The present invention discloses a nano-conductive rubber sensing unit and a preparation method therefor, which belong to the technical field of pressure measurement. The nano-conductive rubber sensing unit of the invention comprises at least two fabric layers, wherein nano-conductive rubber is filled between every two adjacent fabric layers, and the nano-conductive rubber is a rubber matrix in which carbon nanotubes are dispersed. The preparation method for the nano-conductive rubber sensing unit of the invention comprises: S1, mixing a rubber matrix with carbon nanotubes in accordance with a mass proportion so as to make a nano-conductive rubber slurry; S2, laying flat one fabric layer, spreading the nano-conductive rubber slurry prepared in S1 over the fabric uniformly to a certain thickness, and then, laying flat the other fabric layer thereon; and S3, pressurizing and heating the nano-conductive rubber sensing unit prepared in S2 to cure the same.

Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: A testing apparatus for testing a circuit board is disclosed, which includes an upper plate, a lower plate, and an adaptor circuit board. A plurality of positioning units is received in the lower plate. Each positioning unit has a plurality of length-variable test probes secured therein. Each test probe has a shell and upper and lower probe ends at opposite ends of the shell. In test, the circuit board is put on the lower plate and the upper plate is lowered to push the circuit board and the lower plate toward the adaptor circuit board. The upper ends of the test probes engage with electrical connectors of the circuit board and the lower ends thereof engage with the adaptor circuit board whereby test of the circuit board can be automatically performed by the testing apparatus.

Abstract: A self-balanced diode device includes a substrate, a doped well, at least one first conductivity type heavily doped fin and at least two second conductivity type heavily doped fins. The doped well is arranged in the substrate. The first conductivity type heavily doped fin is arranged in the doped well, arranged in a line along a first direction, and protruded up from a surface of the substrate. The second conductivity type heavily doped fins is arranged in the doped well, arranged in a line along a second direction intersecting the first direction, respectively arranged at two opposite sides of the first conductivity type heavily doped fin, and protruded up from the surface of the substrate. Each second conductivity type heavily doped fin and the first conductivity type heavily doped fin are spaced at a fixed interval.

Abstract: A self-balanced silicon-controlled rectification device includes a substrate, an N-type doped well, a P-type doped well, at least one heavily doped clamping fin, at least one first P-type heavily doped fin, and at least one first N-type heavily doped fin. The N-type doped well and the P-type doped well are arranged in the substrate. The heavily doped clamping fin is arranged in the N-type doped well and the P-type well and protruded up from a surface of the substrate. The first P-type heavily doped fin and the first N-type heavily doped fin are respectively arranged in the N-type doped well and the P-type doped well, and protruded up from the surface of the substrate. The abovementioned elements forms silicon-controlled rectifiers (SCRs) are forward biased to generate uniform electrostatic discharge (ESD) currents through the SCRs.

Abstract: A bipolar transistor device includes a substrate and at least one first transistor unit. The first transistor unit includes a first doped well of first conductivity type, at least one first fin-based structure and at least one second fin-based structure. The first fin-based structure includes a first gate strip and first doped fins arranged in the first doped well, and the first gate strip is floating. The second fin-based structure includes a second gate strip and second doped fins arranged in the first doped well, and the second gate strip is floating. The first doped fins, the second doped fins and the first doped well form first BJTs, and the first doped fins and the second doped fins are respectively coupled to high and low voltage terminals.

Abstract: The present invention provides a method for producing an R-T-B-M sintered magnet having an oxygen content of less than 0.07 wt. % from R-T-B-M raw materials. The composition of R-T-B-M includes R being at least one element selected from a rare earth metal including Sc and Y. The composition also includes T being at least one element selected from Fe and Co. B in the composition is defined as Boron. The composition further includes M being at least one element selected from Ti, Ni, Nb, Al, V, Mn, Sn, Ca, Mg, Pb, Sb, Zn, Si, Zr, Cr, Cu, Ga, Mo, W, and Ta. The present invention provides for a step of creating an inert gas environment in the steps of casting, milling, mixing, molding, heating, and aging to prevent the powder from reacting with the oxygen in anyone of the above mentioned steps.

Abstract: A machine for testing the parts and functions of a mobile phone includes a supporting mechanism, a platform, a receiving portion, and a detecting mechanism. The supporting mechanism is mounted in a box. The platform is slidably mounted on the supporting mechanism. The receiving portion is used to receive the mobile phone. The receiving portion is rotatably mounted on the platform. Devices within the machine are operated to test the mobile phone. A mobile phone testing system used in the testing machine is also described.

Abstract: Methods and computer program products for determining one or more settings of a camera apparatus are provided. The methods include obtaining one or more parameters of the camera apparatus and determining one or more settings of the camera apparatus using the one or more parameters and an image repository. The image repository may include images with image parameters associated with the images, which may be correlated with the one or more parameters of the camera apparatus, and the images may also have an associated rating attribute. One or more images may be identified for inclusion in a subset of images, based on an image's image parameters and/or based on an image's rating attribute. The camera settings of one image of the subset of images, corresponding to the settings used to create the one image, may be used to automatically adjust the one or more settings of the camera apparatus.

Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: A voltage source generator includes a light-transmissive component and a plurality of vertical multi junction (VMJ) cells. The light-transmissive component includes an inner space. The VMJ cells are disposed within the inner space of the light-transmissive component to receive light and perform light-to-electricity conversion. The VMJ cells are connected in series. The voltage source generator can generate a kV-level voltage and meet small-sized and low-cost demands. A voltage source module includes at least two voltage source generators connected to at least one electrical connector.

Abstract: A testing apparatus for testing a circuit board is disclosed, which includes an upper plate, a lower plate, and an adaptor circuit board. A plurality of positioning units is received in the lower plate. Each positioning unit has a plurality of length-variable test probes secured therein. Each test probe has a shell and upper and lower probe ends at opposite ends of the shell. In test, the circuit board is put on the lower plate and the upper plate is lowered to push the circuit board and the lower plate toward the adaptor circuit board. The upper ends of the test probes engage with electrical connectors of the circuit board and the lower ends thereof engage with the adaptor circuit board whereby test of the circuit board can be automatically performed by the testing apparatus.

Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.