Abstract: A method of extracting parasitic parameters of a 3D IC is provided in the present invention, including steps of providing a 3D IC having multiple dies, merging respective layouts of the multiple dies into a common layout, creating a common LVS file and a common LPE file for those multiple dies based on the common layout, creating respective LVS files and respective LPE files for every die based on the respective layouts, creating a common netlist from the common LVS file and common LPE file, creating corresponding respective netlists from the respective LVS files and respective LPE files, merging the common netlist and respective netlists into a netlist, and extracting common parasitic parameters of the dies from the netlist.