Patents by Inventor Jie Si

Jie Si has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dynamic sectors in a wireless communication system
    Patent number: 8670778
    Abstract: A method for dynamic sector creation is disclosed. The method may include determining that a first sector of a cell is overloaded. The method may also include creating a second sector within the first sector. The method may further include transferring one or more mobile stations from the first sector to the second sector.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: March 11, 2014
    Assignee: Qualcomm Incorporated
    Inventors: Jie Si, Rilun Tang, Syed Nadeem Ahsan
  • Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials
    Patent number: 5717234
    Abstract: A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru (C.sub.5 H.sub.5).sub.2.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: February 10, 1998
    Assignees: Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Inc.
    Inventors: Jie Si, Seshu B. Desu, Chien-Hsiung Peng
  • Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials
    Patent number: 5629229
    Abstract: A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2.
    Type: Grant
    Filed: July 12, 1995
    Date of Patent: May 13, 1997
    Assignees: Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Inc.
    Inventors: Jie Si, Seshu B. Desu, Chien-Hsiung Peng
  • Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices
    Patent number: 5625587
    Abstract: A ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by a MOD process, or a liquid source delivery process, all of which are described.
    Type: Grant
    Filed: July 12, 1995
    Date of Patent: April 29, 1997
    Assignee: Virginia Polytechnic Institute and State University
    Inventors: Chien-Hsiung Peng, Seshu B. Desu, Jie Si