Abstract: An epitaxial structure includes a substrate, a lower super-lattice laminate, a middle super-lattice laminate, an upper super-lattice laminate and a channel layer. The lower super-lattice laminate includes a plurality of first lower film layers and a plurality of second lower film layers stacked alternately. The first lower film layer includes aluminum nitride. The second lower film layer includes aluminum gallium nitride. The middle super-lattice laminate includes a plurality of first middle film layers and a plurality of second middle film layers stacked alternately. The first middle film layer includes aluminum nitride. The second middle film layer includes gallium nitride doped with a doping material. The upper super-lattice laminate includes a plurality of first upper film layers and a plurality of second upper film layers stacked alternately. The first upper film layer includes gallium nitride doped with the doping material. The second upper film layer includes gallium nitride.

Abstract: An epitaxy substrate including a substrate and an aluminum nitride layer is provided. The substrate has a first surface and a second surface opposite to each other. The substrate has a ring-shaped protrusion on the edge of the second surface. The aluminum nitride layer is disposed on the first surface of the substrate. An epitaxial wafer structure is also provided.

Abstract: An epitaxial structure includes a substrate, a lower super-lattice laminate, a middle super-lattice laminate, an upper super-lattice laminate and a channel layer. The lower super-lattice laminate includes a plurality of first lower film layers and a plurality of second lower film layers stacked alternately. The first lower film layer includes aluminum nitride. The second lower film layer includes aluminum gallium nitride. The middle super-lattice laminate includes a plurality of first middle film layers and a plurality of second middle film layers stacked alternately. The first middle film layer includes aluminum nitride. The second middle film layer includes gallium nitride doped with a doping material. The upper super-lattice laminate includes a plurality of first upper film layers and a plurality of second upper film layers stacked alternately. The first upper film layer includes gallium nitride doped with the doping material. The second upper film layer includes gallium nitride.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor system and method thereof produce a control signal to make a input terminal repeatedly switch between high potential and low potential, thereby modulating image signals at a specific frequency to prevent image quality from being affected by direct current (DC) voltage variations. The mechanism thus helps improving the image quality.

Abstract: A driving control system actuated by visual evoked brain waves which are induced by a multi-frequency and multi-phase encoder, the driving control system includes an optical flash generating device, a brain wave signal measurement device, a signal processing and analyzing device and a control device. The brain wave signal measurement device is configured for measuring a steady-state visual evoked response (SSVER) signal inducing by a user gazing the flash light source generated by the optical flash generating device. The signal processing and analyzing device is configured for calculating the frequency parameter and the phase parameter of the SSVER signal by a mathematical method, and analyzing whether those parameters are same as the optical flash generating device's parameters so as to generate a judgment result. The control device generates a control command according to the judgment result for controlling at least one of peripheral equipments.

Abstract: A method for dynamic sector creation is disclosed. The method may include determining that a first sector of a cell is overloaded. The method may also include creating a second sector within the first sector. The method may further include transferring one or more mobile stations from the first sector to the second sector.

Abstract: In a driving control system actuated by visual evoked brain waves which are induced by a multi-frequency and multi-phase encoder, and a corresponding method configured for analyzing brain wave signals in order to control at least one peripheral equipment, the driving control system includes an optical flash generating device, a brain wave signal measurement device, a signal processing and analyzing device and a control device. The optical flash generating device is configured for generating at least one flash light source by a multi-frequency and multi-phase encoder. The brain wave signal measurement device is configured for measuring a brain wave signal inducing by a user gazing the flash light source. The signal processing and analyzing device is configured for calculating the frequency and the phase of the brain wave by a mathematical method, and analyzing whether the frequency and the phase of the brain wave same to the those of the optical flash generating device.