Abstract: The present invention provides isolated promoters, transgene expression cassettes, vectors, kits, and methods for treatment of genetic diseases that affect the cone cells of the retina.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract: The present invention provides isolated promoters, transgene expression cassettes, vectors, kits, and methods for treatment of genetic diseases that affect the cone cells of the retina.

Abstract: A new method is provided for the creation of PLDD regions that is aimed at reducing lateral p-type impurity diffusion. The process starts with a silicon substrate on the surface of which gate electrodes have been created. An NLDD implantation is performed self-aligned with the NMOS gate electrode, a layer of oxide (oxide liner) is deposited over the structure over which a layer of nitride is deposited over which a first layer of top oxide is deposited. First gate spacers are formed by etching the first layer of top oxide, stopping on the nitride layer. NS/D and PS/D implantations are performed self-aligned with respectively the NMOS and the PMOS devices, the S/D implantations are annealed. The first gate oxide spacers are removed, a PLDD implantation is performed self-aligned with the PMOS gate electrode. A second layer of top oxide is deposited over the structure and etched to form the second gate spacers on the sidewalls of the NMOS and PMOS gate electrodes.

Abstract: The present invention is directed to isolated nucleic acid molecules encoding mammalian 5-oxoprolinase (m 5-OPase). Expression vectors and host cells comprising the nucleic acid molecules are also provided, as well as methods for increasing or decreasing the expression of m 5-OPase in host cells. The invention further provides a method of screening a substance for the ability of the substance to modify m 5-OPase function, and a method for isolating other m 5-OPase molecules. DNA oligomers and antibodies specific for m 5-OPase are provided, each of which can be used to detect m 5-OPase in a sample.