Abstract: A component cooling system includes a component tank configured to receive a heat-generating device. The component tank is at least partially filled with a subcooled liquid at a first pressure and at a first temperature. A cryogenic system maintains the component tank at essentially the first temperature. The cryogenic system includes a heat exchange system thermally coupled with at least a portion of the component tank. The heat exchange system is at least partially filled with a second saturated liquid at a second pressure and at essentially the first temperature. A cryostat tank is fluidly-coupled with the heat exchange system and allows for pumpless displacement of the second saturated liquid between the heat exchange system and the cryostat tank.

Abstract: Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y2O3—ZrO2 solid solution, YAG, and YF3 provides a low porosity coating with smooth and compacted surfaces when such ceramics are spray coated from a powder feed having an average effective diameter ranging from about 22 ?m to about 0.1 ?m. These spray-coated materials reduce the generation of particulates in corrosive reducing plasma environments.

Abstract: Methods for forming dual damascene structures in low-k dielectric materials that facilitate reducing photoresist poison issues are provided herein. In some embodiments, such methods may include plasma etching a via through a first mask layer into a low-k dielectric material disposed on a substrate. The first mask layer may then be removed using a process including exposing the first mask layer to a first plasma comprising an oxygen containing gas and at least one of a dilutant gas or a passivation gas, and subsequently exposing the first mask layer to a second plasma comprising an oxygen containing gas and formed using one of either plasma bias power or plasma source power. An anti-reflective coating may then be deposited into the via and atop the low-k dielectric material. A trench may then be plasma etched through a second mask layer formed atop the anti-reflective coating into the low-k dielectric material.

Abstract: An integrated circuit (IC) includes multiple embedded test circuits that all include a ring oscillator coupled to a test load. The test load either is a direct short in the ring oscillator or else is a interconnect load that is representative of one of the interconnect layers in the IC. A model equation is defined for each embedded test circuit, with each model equation specifying the output delay of its associated embedded test circuit as a function of Front End OF the Line (FEOL) and Back End Of the Line (BEOL) parameters. The model equations are then solved for the various FEOL and BEOL parameters as functions of the test circuit output delays. Finally, measured output delay values are substituted in to these parameter equations to generate actual values for the various FEOL and BEOL parameters, thereby allowing any areas of concern to be quickly and accurately identified.

Abstract: An integrated circuit (IC) includes multiple embedded test circuits that all include a ring oscillator coupled to a test load. The test load either is a direct short in the ring oscillator or else is a interconnect load that is representative of one of the interconnect layers in the IC. A model equation is defined for each embedded test circuit, with each model equation specifying the output delay of its associated embedded test circuit as a function of Front End OF the Line (FEOL) and Back End Of the Line (BEOL) parameters. The model equations are then solved for the various FEOL and BEOL parameters as functions of the test circuit output delays. Finally, measured output delay values are substituted in to these parameter equations to generate actual values for the various FEOL and BEOL parameters, thereby allowing any areas of concern to be quickly and accurately identified.

Abstract: Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Abstract: A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

Abstract: A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract: A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

Abstract: A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and post-machining anneal are designed to provide silicon parts that are particularly suited for use in corrosive environments.

Abstract: Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.

Abstract: A cryogenically-cooled HTS cable is configured to be included within a utility power grid having a maximum fault current that would occur in the absence of the cryogenically-cooled HTS cable. The cryogenically-cooled HTS cable includes a continuous liquid cryogen coolant path for circulating a liquid cryogen. A continuously flexible arrangement of HTS wires has an impedance characteristic that attenuates the maximum fault current by at least 10%. The continuously flexible arrangement of HTS wires is configured to allow the cryogenically-cooled HTS cable to operate, during the occurrence of a maximum fault condition, with a maximum temperature rise within the HTS wires that is low enough to prevent the formation of gas bubbles within the liquid cryogen.

Abstract: A superconducting transformer system is configured to be included within a utility power grid having a known fault current level. The superconducting transformer system includes a non-superconducting transformer interconnected between a first node and a second node of the utility power grid. A superconducting transformer is interconnected between the first node and the second node of the utility power grid. The superconducting transformer and the non-superconducting transformer are electrically connected in parallel. The superconducting transformer has a lower series impedance than the non-superconducting transformer when the superconducting transformer is operated below a critical current level and a critical temperature. The superconducting transformer is configured to have a series impedance that is at least N times the series impedance of the non-superconducting transformer when the superconducting transformer is operated at or above one or more of the critical current level and the critical temperature.

Abstract: A superconducting electrical cable system is configured to be included within a utility power grid. The superconducting electrical cable system includes a superconducting electrical path interconnected between a first and a second node within the utility power grid. A non-superconducting electrical path is interconnected between the first and second nodes within the utility power grid. The superconducting electrical path and the non-superconducting electrical path are electrically connected in parallel. The superconducting electrical path has a lower series impedance, when operated below a critical current level, than the non-superconducting electrical path. The superconducting electrical path has a higher series impedance, when operated at or above the critical current level, than the non-superconductor electrical path.

Abstract: A cryogenically-cooled HTS wire includes a stabilizer having a total thickness in a range of 200-600 micrometers and a resistivity in a range of 0.8-15.0 microOhm cm at approximately 90 K. A first HTS layer is thermally-coupled to at least a portion of the stabilizer.

Abstract: A superconducting electrical cable system is configured to be included within a utility power grid having a known fault current level. The superconducting electrical cable system includes a non-superconducting electrical path interconnected between a first node and a second node of the utility power grid. A superconducting electrical path is interconnected between the first node and the second node of the utility power grid. The superconducting electrical path and the non-superconducting electrical path are electrically connected in parallel, and the superconducting electrical path has a lower series impedance than the non-superconducting electrical path when the superconducting electrical path is operated below a critical current level and a critical temperature.

Abstract: High-current, compact, flexible conductors containing high temperature superconducting (HTS) tapes and methods for making the same are described. The HTS tapes are arranged into a stack, a plurality of stacks are arranged to form a superstructure, and the superstructure is twisted about the cable axis to obtain a HTS cable. The HTS cables of the invention can be utilized in numerous applications such as cables employed to generate magnetic fields for degaussing and high current electric power transmission or distribution applications.

Abstract: Method and system for retrieving advertisement information. Information characterizing a user's past search behavior is utilized in creating index data that associate individual users to advertisements. When a search request from a user is received, the index data are utilized to identify one or more advertisements with respect to the received user's search request. Such identified advertisements match the user's past search behavior.

Abstract: A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part by heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate. At least one of the sintering and annealing atmospheres is an oxygen-containing atmosphere.

Abstract: A method and system for providing protection for a superconducting electrical cable located in a utility power network includes detecting a fault current on the superconducting electric cable, determining the cumulative total energy dissipated in the superconducting electrical cable from the fault current and at least one prior fault current over a predetermined time period, and determining whether to disconnect the superconducting electrical cable from the utility power network on the basis of the cumulative total energy dissipated.