Patents by Inventor Jieguang Huo
Jieguang Huo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100136737Abstract: Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide.Type: ApplicationFiled: February 4, 2010Publication date: June 3, 2010Applicant: Semiconductor Manufacturing InternationalInventors: Jianping Yang, Jieguang Huo, Chunyan Xin
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Patent number: 7700399Abstract: Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide.Type: GrantFiled: October 25, 2005Date of Patent: April 20, 2010Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Jieguang Huo, Chunyun Xin
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Publication number: 20100015745Abstract: A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method form a first thickness of silicon dioxide in a first region of the surface region, a second thickness of silicon dioxide in a second region of the surface region, and a third thickness of silicon dioxide in a third region of the surface region. The method includes forming a first gate layer overlying the second region and a second gate layer overlying the third region, while exposing a portion of the first thickness of silicon dioxide. An N-type impurity characteristic is formed within a region within a vicinity underlying the first thickness of silicon dioxide in the first region of the surface region to cause formation of a photo diode device characterized by the N-type impurity region and the P-type substrate.Type: ApplicationFiled: October 27, 2008Publication date: January 21, 2010Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jieguang Huo, Jianping Yang
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Publication number: 20100009487Abstract: A method of forming a CMOS image sensor device. The method includes providing a semiconductor substrate having a P-type impurity characteristic. The semiconductor substrate includes a surface region. The method includes forming a gate oxide layer overlying the surface region and forming a first gate structure overlying a first portion of the gate oxide layer, the first gate structure has a top surface region and at least a side region. The method forms an N-type impurity region in a portion of the semiconductor substrate to form a photodiode device region from the N-type impurity region and the P-type impurity.Type: ApplicationFiled: September 26, 2008Publication date: January 14, 2010Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jieguang Huo, Jianping Yang
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Patent number: 7582522Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.Type: GrantFiled: December 18, 2007Date of Patent: September 1, 2009Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Chunyan Xin, Jieguang Huo, Yanyong Wang
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Publication number: 20080145963Abstract: The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielectric layer on the surface of the semiconductor substrate in the region II; forming a poly-silicon gate on the surface of the semiconductor substrate in the region II; forming a deep doped well in the region I through an ion implantation with high energy; performing an ion implantation with low energy in the region I and an ion implantation for lightly doped source/drain in the region II simultaneously; and forming source/drain regions in the semiconductor substrate in the region II.Type: ApplicationFiled: October 11, 2007Publication date: June 19, 2008Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Jieguang Huo
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Publication number: 20080128770Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.Type: ApplicationFiled: December 18, 2007Publication date: June 5, 2008Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Chunyan Xin, Jieguang Huo, Yanyong Wang
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Patent number: 7335546Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.Type: GrantFiled: July 19, 2005Date of Patent: February 26, 2008Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Chunyan Xin, Jieguang Huo, Yanyong Wang
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Publication number: 20060292730Abstract: A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.Type: ApplicationFiled: July 19, 2005Publication date: December 28, 2006Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Chunyan Xin, Jieguang Huo, Yanyong Wang
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Publication number: 20060275945Abstract: Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide.Type: ApplicationFiled: October 25, 2005Publication date: December 7, 2006Applicant: Semiconductor Manufacturing Int'l (Shanghai) CorporationInventors: Jianping Yang, Jieguang Huo, Chunyan Xin