Patents by Inventor Jie-Jie Xu

Jie-Jie Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing
    Patent number: 7199032
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: April 3, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Duofeng Yue, Peijun J. Chen, Sue Ellen Crank, Thomas D. Bonifield, Jiong-Ping Lu, Jie-Jie Xu
  • Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing
    Publication number: 20060024935
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
    Type: Application
    Filed: July 30, 2004
    Publication date: February 2, 2006
    Applicant: Texas Instruments Incorporated
    Inventors: Duofeng Yue, Peijun Chen, Sue Crank, Thomas Bonifield, Jiong-Ping Lu, Jie-Jie Xu