Abstract: The present invention relates to a composition for temperature sensors including graphene oxide, DNAzyme and PNA, a temperature sensing method and a kit using the same. In the present invention, when the DNAzyme/PNA duplex is dissociated at a certain temperature, graphene oxide adsorbs PNA with excellent selectivity and irreversibility, enabling recall of temperature, to permit delayed color development in the time of need. Also, the target temperature can be easily and quickly detected with the naked eye through the color change of the colorimetric reagent, and the thermosensor is technically convenient and easy to apply, so it can be used in various biological applications. Moreover, it can be used as a barcode (on/off) system using a combination of PNA probes with various lengths, and thus can be broadly applied to sensing a diverse range of temperatures.

Abstract: A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

Abstract: A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization elements into the semiconductor substrate to form an amorphous portion at a side of the gate pattern, removing the amorphous portion to form a recess region, and forming a source/drain pattern in the recess region. When the recess region is formed, an etch rate of the amorphous portion is substantially the same in two different directions (e.g., <111> and any other direction) of the semiconductor substrate.

Abstract: A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization elements into the semiconductor substrate to form an amorphous portion at a side of the gate pattern, removing the amorphous portion to form a recess region, and forming a source/drain pattern in the recess region. When the recess region is formed, an etch rate of the amorphous portion is substantially the same in two different directions (e.g., <111> and any other direction) of the semiconductor substrate.