Patents by Inventor Jieyin Zhang

Jieyin Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patterned silicon substrate-silicon germanium, thin film composite structure and preparation methods and application thereof
    Patent number: 11769799
    Abstract: The present invention provides a patterned silicon substrate-silicon germanium thin film composite structure comprising a silicon substrate having a patterned structure, a silicon germanium buffer layer positioned on the silicon substrate, a silicon germanium/silicon superlattice layer positioned on the silicon germanium buffer layer and a silicon germanium thin film layer positioned on the silicon germanium/silicon superlattice layer, wherein the silicon germanium/silicon superlattice layer comprises silicon germanium layers and silicon layers which are grown alternately. The present invention also provides a preparation method of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention. The present invention also provides an application of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention in strained silicon devices.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: September 26, 2023
    Assignee: Institute of Physics, Chinese Academy of Sciences
    Inventors: Jianjun Zhang, Jieyin Zhang
  • PATTERNED SILICON SUBSTRATE-SILICON GERMANIUM, THIN FILM COMPOSITE STRUCTURE AND PREPARATION METHODS AND APPLICATION THEREOF
    Publication number: 20220157942
    Abstract: The present invention provides a patterned silicon substrate-silicon germanium thin film composite structure comprising a silicon substrate having a patterned structure, a silicon germanium buffer layer positioned on the silicon substrate, a silicon germanium/silicon superlattice layer positioned on the silicon germanium buffer layer and a silicon germanium thin film layer positioned on the silicon germanium/silicon superlattice layer, wherein the silicon germanium/silicon superlattice layer comprises silicon germanium layers and silicon layers which are grown alternately. The present invention also provides a preparation method of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention. The present invention also provides an application of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention in strained silicon devices.
    Type: Application
    Filed: March 3, 2021
    Publication date: May 19, 2022
    Applicant: Institute of Physics, Chinese Academy of Sciences
    Inventors: Jianjun Zhang, Jieyin Zhang