Abstract: The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.

Abstract: The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.

Abstract: The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

Abstract: The present disclosure relates to a copper nanofiber, its preparation method and a display panel. The copper nanofiber comprises a copper nanofiber body, an aluminum-doped zinc oxide layer disposed at the external surface of the copper nanofiber body, and a passivation layer disposed on a side of the aluminum-doped zinc oxide layer away from the copper nanofiber body.