Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an encapsulation layer over the first dies and the substrate, an interface layer over the first dies and the encapsulation layer, and a passive heat spreader on the interface layer, wherein the interface layer thermally couples the first dies to the passive heat spreader. The passive heat spreader includes a silicon (Si) or a silicon carbide (SiC). The interface layer includes a silicon nitride (SiN) material, a silicon monoxide (SiO) material, a silicon carbon nitride (SiCN) material, or a thermal adhesive material. The semiconductor package may include a plurality of second dies and the substrate on a package substrate, a thermal interface material (TIM) over the second dies, the passive heat spreader, and the package substrate, and a heat spreader over the TIM and the package substrate.

Abstract: An abrasive article may include an organic bond material, abrasive particles contained within the organic bond material and a plasticizer contained within the organic bond material. The plasticizer may include at least one of an aromatic phenyl group, a heteroaromatic furyl group, or a saturated aliphatic hydrocarbon. The plasticizer may further include a polar group.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an encapsulation layer over the first dies and the substrate, an interface layer over the first dies and the encapsulation layer, and a passive heat spreader on the interface layer, wherein the interface layer thermally couples the first dies to the passive heat spreader. The passive heat spreader includes a silicon (Si) or a silicon carbide (SiC). The interface layer includes a silicon nitride (SiN) material, a silicon monoxide (SiO) material, a silicon carbon nitride (SiCN) material, or a thermal adhesive material. The semiconductor package may include a plurality of second dies and the substrate on a package substrate, a thermal interface material (TIM) over the second dies, the passive heat spreader, and the package substrate, and a heat spreader over the TIM and the package substrate.

Abstract: A curable composition includes a hydrogen-bonded prepolymer, a plasticizer, and, optionally, a crosslinking agent. The plasticizer includes a reactive plasticizer having structure (I), (II), or (III), wherein X is —OR1, —N(R1)2, —R4—OR1, or —R4—N(R1)2, wherein R1 is independently at each occurrence hydrogen or C1-6 alkyl, and R4 is C1-12 alkylene; y is zero or 1; z is zero or 1; R2 is C1-12 alkyl; and R3 is C1-12 alkyl when z is 1, or R3 is C1-12 alkyl or H when z is zero.

Abstract: A curable composition includes a hydrogen-bonded prepolymer, a plasticizer that includes an alkyl benzoate or an alkyl phenyl ketone, and, optionally, a crosslinking agent. The plasticizer promotes a high extent of crosslinking and provides a more positive health and safety profile than the incumbent plasticizer, furfural. A cured resin and a method of forming it are described.

Abstract: A curable composition includes a hydrogen-bonded prepolymer, a plasticizer that includes an alkyl benzoate or an alkyl phenyl ketone, and, optionally, a crosslinking agent. The plasticizer promotes a high extent of crosslinking and provides a more positive health and safety profile than the incumbent plasticizer, furfural. A cured resin and a method of forming it are described.

Abstract: A curable composition includes a hydrogen-bonded prepolymer, a plasticizer, and, optionally, a crosslinking agent. The plasticizer includes a reactive plasticizer having structure (I), (II), or (III), wherein X is —OR1, —N(R1)2, —R4—OR1, or —R4—N(R1)2, wherein R1 is independently at each occurrence hydrogen or C1-6 alkyl, and R4 is C1-12 alkylene; y is zero or 1; z is zero or 1; R2 is C1-12 alkyl; and R3 is C1-12 alkyl when z is 1, or R3 is C1-12 alkyl or H when z is zero.