Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A method for preparing a gate oxide layer is described. First, a trench surrounding an active area is formed in a substrate, and a dielectric block is then formed in the trench such that an upper surface of the dielectric block is not aligned with that of the substrate. Subsequently, an ion implantation process is performed to implant nitrogen-containing dopants into the substrate in the active area, and a thermal oxidation process is then performed to form a gate oxide layer on the surface of the substrate in the active area. Particularly, the concentration of the nitrogen-containing dopants at the center of the active area is higher than that at the edge of the active area. The nitrogen-containing dopants inhibit the reaction rate of the thermal oxidation process, so as to prevent the gate oxide layer from thinning at the edge near the trench.

Abstract: A memory cell structure comprises a semiconductor substrate, two stack structures positioned on the semiconductor substrate, two conductive spacers positioned on sidewalls of the two stack structures, a gate oxide layer covering a portion of the semiconductor substrate between the two conductive spacers and a gate structure positioned at least on the gate oxide layer. Particularly, each of two stack structures includes a first oxide block, a conductive block and a second oxide block, and the two conductive spacers are positioned at on the sidewall of the two conductive blocks of the two stack structures. The two conductive spacers are preferably made of polysilicon, and have a top end lower than the bottom surface of the second oxide block. In addition, a dielectric spacer is positioned on each of the two conductive spacers.

Abstract: An air cell bumper device includes a mounting base mounted on a mounting track being fixed to the body of a motor vehicle, and a rubber air bag fastened to the mounting base for impact protection, the rubber air bag having an inflatable big air bag and small air-tight air bags separated around the big air bag by partition walls, and whereby when the rubber air bag is compressed by an impact, the partition walls will be torn permitting air to rapidly move from the big air chamber into the small air chamber to buffer the impact.