Patents by Inventor Jih-Chuyng Twu

Jih-Chuyng Twu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish
    Patent number: 6458689
    Abstract: A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a dielectric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: October 1, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Hua Yu, Syun-Ming Jang, Tsu Shih, Anthony Yen, Jih-Chuyng Twu
  • Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish
    Publication number: 20010016414
    Abstract: A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a dielectric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.
    Type: Application
    Filed: March 28, 2001
    Publication date: August 23, 2001
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Chen-Hua Yu, Syun-Ming Jang, Tsu Shih, Anthony Yen, Jih-Chuyng Twu