Abstract: A semiconductor package and a fabrication method thereof are disclosed, which is characterized in that a solder material is used to bond an LED chip and a substrate so as to provide a thick joint between the substrate and the LED chip and hence reduce stresses generated between the LED chip and the substrate due to their CTE mismatch, thereby preventing delamination from occurring between the LED chip and the substrate after a reliability test.

Abstract: A semiconductor package and a fabrication method thereof are disclosed, which is characterized in that a solder material is used to bond an LED chip and a substrate so as to provide a thick joint between the substrate and the LED chip and hence reduce stresses generated between the LED chip and the substrate due to their CTE mismatch, thereby preventing delamination from occurring between the LED chip and the substrate after a reliability test.

Abstract: An LED package structure includes: a substrate having a die attach pad; a first insulating layer formed on the die attach pad and having a plurality of openings; an LED chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; a second insulating layer formed on the inactive surface and having a plurality of openings, wherein the LED chip is disposed on the substrate with the openings of the second insulating layer corresponding in position to the openings of the first insulating layer; and a plurality of metallic thermal conductive elements formed in the openings of the first insulating layer and the corresponding openings of the second insulating layer, thereby effectively alleviating the conventional problem of thermal stresses induced by a mismatch in CTEs of the LED chip and the substrate.

Abstract: A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength.

Abstract: A light-emitting diode (LED) package structure and a packaging method thereof are provided. The packaging method includes: forming first conductive layers on a silicon substrate, and forming a reflection cavity and electrode via holes from a top surface of the silicon substrate; forming a reflection layer on predetermined areas of a surface of the reflection cavity, and forming second conductive layers and metal layers on surfaces of the electrode via holes; and mounting a chip and forming an encapsulant, so as to fabricate the LED package structure. In the present invention, there is no need to perform at least two plating processes for connecting upper and lower conductive layers of the silicon substrate in the electrode via holes, and the problem of poor connection of the conductive layers in the electrode via holes can be avoided, thereby making the fabrication processes simplified and time-effective and also improving the overall production yield.

Abstract: A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength.

Abstract: A new light emitting device is disclosed. The device includes a reflector, a surface layer, and a light emitting layer located there-between. The light emitting layer emits light at a wavelength ?. An optical thickness from the light emitting layer to the reflector is approximately m*?/4, where m is a positive integer. Furthermore, the said device may, in addition, include an optical transform layer adjoining to the light emitting layer. Thus, the light emitted by the device can be not only collimated but also polarized.