Patents by Inventor Jih-Kang CHEN
Jih-Kang CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984544Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.Type: GrantFiled: August 27, 2021Date of Patent: May 14, 2024Assignee: Lextar Electronics CorporationInventors: Jih-Kang Chen, Shiou-Yi Kuo
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Patent number: 11811001Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.Type: GrantFiled: October 31, 2022Date of Patent: November 7, 2023Assignee: Lextar Electronics CorporationInventors: Jih-Kang Chen, Shih-Wei Yang
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Publication number: 20230335680Abstract: The light emitting device includes a growth substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the growth substrate from top to bottom. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars.Type: ApplicationFiled: June 16, 2023Publication date: October 19, 2023Inventors: Jih-Kang CHEN, Shih-Wei YANG, Tsai-Chen SUNG
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Publication number: 20230197905Abstract: A light-emitting device includes a substrate, a plurality of light-emitting diode (LED) dies, a first reflection layer, and a second reflection layer. The LED dies are on the substrate. The first reflection layer is on the LED dies. The second reflection layer is on the first reflection layer. The first reflection layer is configured to reflect a waveband of light emitted from the LED dies. The second reflection layer is configured to reflect a laser waveband, wherein the wavelength of the laser waveband is less than 420 nm.Type: ApplicationFiled: December 8, 2022Publication date: June 22, 2023Inventors: Jih-Kang CHEN, Shiou-Yi KUO, Guo-Yi SHIU
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Publication number: 20230078065Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.Type: ApplicationFiled: October 31, 2022Publication date: March 16, 2023Inventors: Jih-Kang CHEN, Shih-Wei YANG
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Publication number: 20230057589Abstract: A light-emitting diode chip includes a semiconductor layer, an insulating layer, a first and a second electrode. The semiconductor layer has a top side, a bottom side opposite to the top side and a sidewall connecting the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer. The insulating layer covers the sidewall and the bottom side of the semiconductor layer, and has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall. A vertical distance between a highest point of the concave-convex structure and that of the protruding portion is from 0.5 ?m to four times the thickness of the semiconductor layer. The first and the second electrode are on the bottom side of the semiconductor layer and penetrate through the insulating layer. The second electrode is adjacent to the first electrode.Type: ApplicationFiled: May 10, 2022Publication date: February 23, 2023Inventors: Jih-Kang CHEN, Shiou-Yi KUO, Guo-Yi SHIU
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Publication number: 20220384693Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.Type: ApplicationFiled: August 27, 2021Publication date: December 1, 2022Inventors: Jih-Kang CHEN, Shiou-Yi KUO
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Patent number: 11515447Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.Type: GrantFiled: September 21, 2020Date of Patent: November 29, 2022Assignee: Lextar Electronics CorporationInventors: Jih-Kang Chen, Shih-Wei Yang
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Publication number: 20220013692Abstract: The light emitting device includes a substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the substrate from bottom to top. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars.Type: ApplicationFiled: May 2, 2021Publication date: January 13, 2022Inventors: Jih-Kang CHEN, Shih-Wei YANG, Tsai-Chen SUNG
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Publication number: 20210288213Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.Type: ApplicationFiled: September 21, 2020Publication date: September 16, 2021Inventors: Jih-Kang CHEN, Shih-Wei YANG