Patents by Inventor Jih-Wen Wang

Jih-Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9296005
    Abstract: A nozzle replaceable atomizer with automatic abnormality detecting function is provided. In the atomizer, when a detachable spray head is assembled to a main machine, a microcomputer serves to automatically set a piezoelectric element at an optimal operating frequency. When working at the optimal operating frequency that allows resonance, the piezoelectric element has the least impedance and the current/voltage phase difference of zero. During the operation of the atomizer, once the current/voltage phase-comparing circuit notices that the current/voltage phase difference is not zero or not close to zero, the microcomputer triggers a frequency-tracing prompter to inform a user that a frequency-tracing switch has to be operated to redefine the operating frequency of the piezoelectric element. If repeated adjustments have been done as failure and the frequency-tracing prompter keeps giving prompts, the user can be sure that the spray head needs to be maintained or replaced.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: March 29, 2016
    Assignees: MOI Global Corporation Ltd., Liga Precision Technology Co., Ltd.
    Inventors: Chin Chien Hu, Jih Wen Wang, Ting-Kuo Chen, Jey Jey Huang
  • Publication number: 20150102124
    Abstract: A nozzle replaceable atomizer with automatic abnormality detecting function is provided. In the atomizer, when a detachable spray head is assembled to a main machine, a microcomputer serves to automatically set a piezoelectric element at an optimal operating frequency. When working at the optimal operating frequency that allows resonance, the piezoelectric element has the least impedance and the current/voltage phase difference of zero. During the operation of the atomizer, once the current/voltage phase-comparing circuit notices that the current/voltage phase difference is not zero or not close to zero, the microcomputer triggers a frequency-tracing prompter to inform a user that a frequency-tracing switch has to be operated to redefine the operating frequency of the piezoelectric element. If repeated adjustments have been done as failure and the frequency-tracing prompter keeps giving prompts, the user can be sure that the spray head needs to be maintained or replaced.
    Type: Application
    Filed: December 17, 2014
    Publication date: April 16, 2015
    Inventors: Chin Chien Hu, Jih Wen Wang, Ting-Kuo Chen, Jey Jey Huang
  • Publication number: 20150097047
    Abstract: A method for controlling and managing a smart atomizer involves automatically frequency tracing to rapidly optimize an operating frequency of a piezoelectric element of a spray nozzle when the spray nozzle is assembled to a main machine of the smart atomizer. The main machine performs spray-dosage setting, so that each spray session can operate according a preset spray dosage, so as to provide consistent spray of liquid easily. While the liquid is sprayed, the frequency-abnormality detecting means keeps detecting whether there is any abnormality of the operating frequency of the piezoelectric element. Thereby, whether the spray nozzle works normally can be easily confirmed by whether a frequency-tracing prompter gives out a prompt and what maintenance message is contained in the prompt. The method also includes event recording and external record reading for storing, exporting and leveraging data about usage of the atomizer for improved usage of the atomizer.
    Type: Application
    Filed: December 17, 2014
    Publication date: April 9, 2015
    Inventors: Chin Chien Hu, Jih Wen Wang, Ting-Kuo Chen, Jey Jey Huang
  • Patent number: 6621139
    Abstract: A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.
    Type: Grant
    Filed: December 31, 2001
    Date of Patent: September 16, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Kaihsiang Yen, Jing-Hung Chiou, Ran-Jin Lin, Jih-Wen Wang, Nai-Hao Kuo
  • Publication number: 20030122207
    Abstract: A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.
    Type: Application
    Filed: December 31, 2001
    Publication date: July 3, 2003
    Applicant: Industrial Technology Research Institute
    Inventors: Kaihsiang Yen, Jing-Hung Chiou, Ran-Jin Lin, Jih-Wen Wang, Nai-Hao Kuo
  • Patent number: 6511609
    Abstract: A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.
    Type: Grant
    Filed: February 20, 2001
    Date of Patent: January 28, 2003
    Assignee: Industrial Technology Research Institute
    Inventors: Ching-Han Jan, Fon-Shan Huang, Jih-Wen Wang
  • Publication number: 20020113038
    Abstract: A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.
    Type: Application
    Filed: February 20, 2001
    Publication date: August 22, 2002
    Inventors: Ching-Han Jan, Fon-Shan Huang, Jih-Wen Wang
  • Patent number: 5342502
    Abstract: A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.
    Type: Grant
    Filed: October 21, 1993
    Date of Patent: August 30, 1994
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Min Peng, Jih-Wen Wang, Chun-Ying Liue, Shinn-Horng Yeh