Abstract: Disclosed is a composite for forming a coacervate interfacial film. The composite for forming the coacervate interfacial film contains a cationic hectorite nanoplate-shaped particle structure containing a hectorite nanoplate-shaped particle and a cationic surfactant coupled to a surface of the hectorite nanoplate-shaped particle, and an anionic cellulose nanofibril containing an anionic functional group in at least a portion thereof, in which the composite may form the coacervate interfacial film at an interface of an oil phase and a water phase through electrostatic interaction between the cationic surfactant and the anionic functional group.

Abstract: A free motion headform (FMH) impact performance prediction device using artificial intelligence includes a data processing processor configured to generate an image by extracting a pre-processed test target image, generated by pre-processing test target design data, using a pre-trained model and generate a pre-processed test target distance value by pre-processing the test target design data. The FMH input performance prediction device also includes a machine learning processor configured to concatenate the image generated by extraction on the basis of the pre-trained model and the pre-processed test target distance value and to predict impact performance using a neural network in which parameters are updated by learning based on an image obtained by pre-processing existing design data and existing impact amount data corresponding to the existing design data. The FMH input performance prediction device further includes an output processor configured to output a value learned by the machine learning processor.

Abstract: Stereoscopic and multiscopic imaging methods and systems are disclosed. An example method can include capturing, with a first image capture device, first image data from a scene within a first field of view, and capturing, with a second image capture device, second image data from the scene within a second field of view overlapping with the first field of view over a stereoscopic overlap region, wherein either or both of the first and second image capture devices include a transmissive diffraction mask (TDM) configured to encode TDM depth information in the first and/or second image data. The method can also include determining stereoscopic depth information within the stereoscopic overlap region based on the first and second image data, determining the TDM depth information encoded in first and/or second image data, and generating combined depth information based on the stereoscopic depth information and the first and/or second TDM depth information.

Abstract: A method for controlling a powertrain of a hybrid vehicle includes the following steps performed by a hybrid controller: determining whether an ambient air temperature is lower than a predetermined temperature; driving a motor and operating a heating disc of an electrically heated catalytic converter disposed in an exhaust pipe of an internal combustion engine during a predetermined operating time when an ambient air temperature is lower than a predetermined temperature; supplying ambient air to the heating disc; and varying a flow rate of the ambient air supplied to the heating disc in response to a temperature change of the heating disc.

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Abstract: Techniques for capturing three-dimensional image data of a scene and processing light field image data obtained by an optical wavefront sensor in 3D imaging applications are provided. The disclosed techniques provide a depth map of an observable scene from light field information about an optical wavefront emanating from the scene, and make use of color filters forming a color mosaic defining a primary color and one or more secondary colors, and color radial transfer functions calibrated to provide object distance information from the spatio-spectrally sampled pixel data.

Abstract: A light field imaging device may include a diffraction grating assembly configured to receive an optical wavefront from a scene and including one or more diffraction gratings. Each diffraction grating has a refractive index modulation pattern with a grating period along a grating axis and is configured to generate a diffracted wavefront. The device may also include a pixel array configured to detect the diffracted wavefront in a near-field region. The pixel array includes light-sensitive pixels and a pixel pitch along the grating axis that is equal to or larger than the grating period. Each pixel samples a portion of the diffracted wavefront and generates a pixel response. The pixels include groups or pairs of adjacent pixels, where the adjacent pixels in each group or pair have different pixel responses as a function of the angle of incidence of the optical wavefront. Light field imaging methods are also disclosed.

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Abstract: A method for programming a non-volatile memory device is provided. The method comprises applying a program word line voltage with a voltage level changed stepwise to a selected word line connected to a plurality of memory cells, and applying a program bit line voltage to a first bit line of a plurality of bit lines connected to a plurality of first memory cells, while the program word line voltage is applied to the selected word line. The program bit line voltage transitions from a first voltage level to one of a program inhibit voltage level, a program voltage level, and a second voltage level. The first and second voltage levels are between the program inhibit voltage level and program voltage level.

Abstract: A display apparatus including a large-area fingerprint sensor includes a display panel displaying an image; a touch panel sensing a touch of a finger; a fingerprint sensor including a plurality of fingerprint pixels and recognizing a fingerprint of the finger; a fingerprint sensor driver driving the fingerprint sensor and including a driver driving the fingerprint sensor and a fingerprint recognizer recognizing a fingerprint by using sensing signals received from the fingerprint sensor; and a touch driver driving the touch panel, wherein the driver of the fingerprint sensor driver provides a sensing gate signal to sensing gate lines included in a first touch block determined being touched by touch position information received from the touch driver, among m (where m being an integer of 2 or greater) number of sensing gate lines included in the fingerprint sensor.

Abstract: A method for controlling an exhaust aftertreatment system for a vehicle includes: determining, by a controller, whether or not a driving state of the vehicle satisfies a clogging determination condition; estimating, by the controller, a normal temperature of a rear end of a catalytic converter upon determining that the clogging determination condition is satisfied; calculating, by the controller, clogging indexes using an actual temperature of the rear end of the catalytic converter measured by a temperature sensor and the estimated normal temperature; determining, by the controller, whether or not it is necessary to settle clogging of the catalytic converter by comparing the clogging indexes with reference ranges; and executing, by the controller, a clogging settlement mode upon determining that it is necessary to settle clogging of the catalytic converter.

Abstract: A light field imaging device and method are provided. The device can include a diffraction grating assembly receiving a wavefront from a scene and including one or more diffraction gratings, each having a grating period along a grating axis and diffracting the wavefront to generate a diffracted wavefront. The device can also include a pixel array disposed under the diffraction grating assembly and detecting the diffracted wavefront in a near-field diffraction regime to provide light field image data about the scene. The pixel array has a pixel pitch along the grating axis that is smaller than the grating period. The device can further include a color filter array disposed over the pixel array to spatio-chromatically sample the diffracted wavefront prior to detection by the pixel array. The device and method can be implemented in backside-illuminated sensor architectures. Diffraction grating assemblies for use in the device and method are also disclosed.

Abstract: A non-volatile memory device comprises a memory cell region including a first metal pad, a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad, a memory cell array in the memory cell region including a plurality of memory cells, each of the memory cells being connected to a plurality of word lines in the memory cell region and a plurality of bit lines in the memory cell region, and a control logic circuit in the peripheral circuit region configured to control voltages to be applied to the plurality of word lines and the plurality of bit lines.

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Abstract: A nonvolatile memory device includes a memory cell region, a peripheral circuit region, a memory block in the memory cell region, a row decoder in the peripheral circuit region, and a control circuit in the peripheral circuit region. The memory cell region includes a first metal pad. The peripheral circuit region includes a second metal pad and is vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory block includes memory cells stacked in a direction intersecting a substrate, and is divided into a plurality of sub-blocks configured to be erased independently. The row decoder selects the memory block by units of a sub-block.

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Abstract: An operation method of a nonvolatile memory device for programming memory cells connected to a selected word line, the method including: performing a program operation; suspending the program operation after performing a first portion of the program operation; and resuming the program operation to perform a second portion of the program operation, wherein the program operation is resumed within a reference time after the program operation is suspended.

Abstract: A method for programming a non-volatile memory device is provided. The method comprises applying a program word line voltage with a voltage level changed stepwise to a selected word line connected to a plurality of memory cells, and applying a program bit line voltage to a first bit line of a plurality of bit lines connected to a plurality of first memory cells, while the program word line voltage is applied to the selected word line. The program bit line voltage transitions from a first voltage level to one of a program inhibit voltage level, a program voltage level, and a second voltage level. The first and second voltage levels are between the program inhibit voltage level and program voltage level.

Abstract: A non-volatile memory device comprises a memory cell region including a first metal pad, a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad, a memory cell array in the memory cell region including a plurality of memory cells, each of the memory cells being connected to a plurality of word lines in the memory cell region and a plurality of bit lines in the memory cell region, and a control logic circuit in the peripheral circuit region configured to control voltages to be applied to the plurality of word lines and the plurality of bit lines.

Abstract: A display apparatus including a large-area fingerprint sensor includes a display panel displaying an image; a touch panel sensing a touch of a finger; a fingerprint sensor including a plurality of fingerprint pixels and recognizing a fingerprint of the finger; a fingerprint sensor driver driving the fingerprint sensor and including a driver driving the fingerprint sensor and a fingerprint recognizer recognizing a fingerprint by using sensing signals received from the fingerprint sensor; and a touch driver driving the touch panel, wherein the driver of the fingerprint sensor driver provides a sensing gate signal to sensing gate lines included in a first touch block determined being touched by touch position information received from the touch driver, among m (where m being an integer of 2 or greater) number of sensing gate lines included in the fingerprint sensor.