Patents by Inventor Ji-Hoon Hong

Ji-Hoon Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240117941
    Abstract: A hydrogen storage system is disclosed and includes a storage unit including a plurality of unit storage containers, in which metal hydride materials are respectively provided in an interior thereof and which are connected to each other in parallel, and a thermal fluid line defining a thermal fluid passage, which passes via the plurality of unit storage containers continuously and through which a thermal fluid flows for heating or cooling the unit storage containers, thereby enhancing a storage performance and an efficiency of the hydrogen.
    Type: Application
    Filed: March 10, 2023
    Publication date: April 11, 2024
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION
    Inventors: Ji Hye Park, Won Jung Kim, Kyung Moon Lee, Dong Hoon Nam, Young Jin Cho, Byeong Soo Shin, Ji Hoon Lee, Suk Hoon Hong, Hoon Mo Park, Yong Doo Son
  • Publication number: 20240117930
    Abstract: A hydrogen storage device includes a storage container having an accommodation space in an interior thereof, a first metal hydride material provided in the interior of the storage container and that stores hydrogen, and a second metal hydride material provided in the interior of the storage container and that stores the hydrogen at a pressure that is different from that of the first metal hydride material. An advantageous effect of restraining an excessive rise of a pressure of the storage container and enhancing safety and reliability may be obtained.
    Type: Application
    Filed: March 10, 2023
    Publication date: April 11, 2024
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION
    Inventors: Ji Hye Park, Won Jung Kim, Kyung Moon Lee, Dong Hoon Nam, Young Jin Cho, Byeong Soo Shin, Ji Hoon Lee, Suk Hoon Hong, Hoon Mo Park, Yong Doo Son
  • Patent number: 11945744
    Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: April 2, 2024
    Assignees: SAMSUNG ENGINEERING CO., LTD., SAMSUNG ELECTRONICS CO., LTD
    Inventors: Seok Hwan Hong, Dae Soo Park, Seung Joon Chung, Yong Xun Jin, Jae Hyung Park, Jae Hoon Choi, Jae Dong Hwang, Jong Keun Yi, Su Hyoung Cho, Kyu Won Hwang, June Yurl Hur, Je Hun Kim, Ji Won Chun
  • Publication number: 20240075905
    Abstract: The present invention relates to a coating composition which is for a wiper blade and is for forming a coating layer for lowering the coefficient of friction of a wiper blade rubber base on glass, the coating composition including a lubricant additive and a solvent, wherein the lubricant additive is functionalized graphene capable of self-adhesion to the wiper blade rubber base.
    Type: Application
    Filed: March 30, 2021
    Publication date: March 7, 2024
    Applicant: BESTGRAPHENE CO., LTD
    Inventors: Myeong Gi KIM, Seong Min CHIN, Sung Min HONG, Ji Taek OH, Jung Hoon KIM
  • Publication number: 20230416306
    Abstract: The present disclosure relates to a wafer level chip scale package with a rhombus shape which includes a semiconductor chip with a rhombus shape and a solder ball array including a plurality of solder balls formed on one surface of the semiconductor chip. Among four interior angles of the semiconductor chip, two of the four interior angles facing each other in a short diagonal direction are approximately 120°, and two of the four interior angles facing each other in a long diagonal direction are approximately 60°.
    Type: Application
    Filed: June 28, 2023
    Publication date: December 28, 2023
    Applicants: SILICON MITUS, INC., Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
    Inventor: Ji Hoon Hong
  • Patent number: 10991760
    Abstract: A memory device includes first and second peripheral regions in which peripheral circuits related to data input/output are disposed, a normal cell region which is disposed on the first peripheral region, and in which a plurality of memory cells storing data are formed, and a dummy cell region which is disposed on the second peripheral region, and in which a plurality of dummy cells forming a plurality of capacitors are formed.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: April 27, 2021
    Assignee: SK hynix Inc.
    Inventor: Ji-Hoon Hong
  • Publication number: 20200091240
    Abstract: A memory device includes first and second peripheral regions in which peripheral circuits related to data input/output are disposed, a normal cell region which is disposed on the first peripheral region, and in which a plurality of memory cells storing data are formed, and a dummy cell region which is disposed on the second peripheral region, and in which a plurality of dummy cells forming a plurality of capacitors are formed.
    Type: Application
    Filed: April 16, 2019
    Publication date: March 19, 2020
    Inventor: Ji-Hoon HONG
  • Patent number: 8207562
    Abstract: An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a first gate insulation layer having a central opening and a second gate insulation layer formed on and/or over an uppermost surface of the first gate insulation layer including the opening. The gate electrode can be formed on and/or over the gate insulation layer. The photodiode can be formed in the semiconductor substrate at one side of the gate electrode so as to generate an optical charge. The floating diffusion region can be formed in the semiconductor at the other side of the gate electrode opposite to the photodiode. The floating diffusion region can be electrically connected to the photodiode through a channel so as to store the optical charge generated from the photodiode.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: June 26, 2012
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Ji-Hoon Hong
  • Patent number: 8169044
    Abstract: Embodiments provide an image sensor. The image sensor includes readout circuitry, an interlayer dielectric, an interconnection, and an image sensing device. The interconnection includes a lower barrier metal and a nitride barrier formed under the lower barrier metal. A contact plug electrically connecting the lower barrier metal to a lower interconnect is formed passing through the nitride barrier.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: May 1, 2012
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Ji Hoon Hong
  • Publication number: 20100059848
    Abstract: Embodiments provide an image sensor. The image sensor includes readout circuitry, an interlayer dielectric, an interconnection, and an image sensing device. The interconnection includes a lower barrier metal and a nitride barrier formed under the lower barrier metal. A contact plug electrically connecting the lower barrier metal to a lower interconnect is formed passing through the nitride barrier.
    Type: Application
    Filed: August 27, 2009
    Publication date: March 11, 2010
    Inventor: Ji Hoon Hong
  • Publication number: 20100059841
    Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes an image sensing device on a substrate, an interlayer dielectric layer over the image sensing device, and an aspheric microlens over the interlayer dielectric layer.
    Type: Application
    Filed: August 27, 2009
    Publication date: March 11, 2010
    Inventor: Ji Hoon Hong
  • Publication number: 20100038690
    Abstract: An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a first gate insulation layer having a central opening and a second gate insulation layer formed on and/or over an uppermost surface of the first gate insulation layer including the opening. The gate electrode can be formed on and/or over the gate insulation layer. The photodiode can be formed in the semiconductor substrate at one side of the gate electrode so as to generate an optical charge. The floating diffusion region can be formed in the semiconductor at the other side of the gate electrode opposite to the photodiode. The floating diffusion region can be electrically connected to the photodiode through a channel so as to store the optical charge generated from the photodiode.
    Type: Application
    Filed: October 19, 2009
    Publication date: February 18, 2010
    Inventor: Ji-Hoon Hong
  • Patent number: 7638354
    Abstract: An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a first gate insulation layer having a central opening and a second gate insulation layer formed on and/or over an uppermost surface of the first gate insulation layer including the opening. The gate electrode can be formed on and/or over the gate insulation layer. The photodiode can be formed in the semiconductor substrate at one side of the gate electrode so as to generate an optical charge. The floating diffusion region can be formed in the semiconductor at the other side of the gate electrode opposite to the photodiode. The floating diffusion region can be electrically connected to the photodiode through a channel so as to store the optical charge generated from the photodiode.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: December 29, 2009
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Ji-Hoon Hong
  • Patent number: 7519686
    Abstract: A wireless receiver for receiving a multi-contents file and a method for outputting data using the same, which can receive, navigation information for providing intuitively recognizable search interfaces to a user by radio in real time, receive various types of contents files by radio in real time, and output the received information and files through an AV device. A video decoder decodes a video stream on the basis of an MPEG standard. An audio decoder decodes an audio contents file. An OSD processor processes a text file and additional information. A video output unit selectively configures decoded video data and text data on one screen and performs encoding and outputting operations based on the format of a display unit. An audio output unit outputs decoded audio data. A user interface receives a user's command. A WLAN card communicates WLAN data with a computer system.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: April 14, 2009
    Assignee: ICUBE
    Inventors: Ji-Hoon Hong, Byung-Ho Lee, Chun-Yong Oh
  • Publication number: 20080157242
    Abstract: An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a first gate insulation layer having a central opening and a second gate insulation layer formed on and/or over an uppermost surface of the first gate insulation layer including the opening. The gate electrode can be formed on and/or over the gate insulation layer. The photodiode can be formed in the semiconductor substrate at one side of the gate electrode so as to generate an optical charge. The floating diffusion region can be formed in the semiconductor at the other side of the gate electrode opposite to the photodiode. The floating diffusion region can be electrically connected to the photodiode through a channel so as to store the optical charge generated from the photodiode.
    Type: Application
    Filed: December 14, 2007
    Publication date: July 3, 2008
    Inventor: Ji-Hoon Hong
  • Publication number: 20040010565
    Abstract: A wireless receiver for receiving a multi-contents file and a method for outputting data using the same, which can receive, navigation information for providing intuitively recognizable search interfaces to a user by radio in real time, receive various types of contents files by radio in real time, and output the received information and files through an AV device. A video decoder decodes a video stream on the basis of an MPEG standard. An audio decoder decodes an audio contents file. An OSD processor processes a text file and additional information. A video output unit selectively configures decoded video data and text data on one screen and performs encoding and outputting operations based on the format of a display unit. An audio output unit outputs decoded audio data. A user interface receives a user's command. A WLAN card communicates WLAN data with a computer system.
    Type: Application
    Filed: May 30, 2003
    Publication date: January 15, 2004
    Applicant: iCUBE
    Inventors: Ji-Hoon Hong, Byung-Ho Lee, Chun-Yong Oh
  • Patent number: 6099302
    Abstract: A boat for semiconductor wafers has reduced contact surface area with the wafer, thereby preventing distortion of the wafer during heating. The boat has an upper member; a lower member, a plurality of wafers being loaded between the upper member and the lower member; and a plurality of support members vertically extended between and connecting the upper member to the lower member for supporting the wafers. A plurality of slots are successively and horizontally formed in each of the support members, and the peripheral edge of the wafer is inserted therein, wherein a hemisphere-shaped protrusion is formed inside the slot, and the bottom surface of the wafer contacts and is supported by each hemisphere-shaped protrusion at a single contact point.
    Type: Grant
    Filed: June 22, 1999
    Date of Patent: August 8, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-hoon Hong, Ki-heum Nam
  • Patent number: RE43210
    Abstract: A wireless receiver for receiving a multi-contents file and a method for outputting data using the same, which can receive, navigation information for providing intuitively recognizable search interfaces to a user by radio in real time, receive various types of contents files by radio in real time, and output the received information and files through an AV device. A video decoder decodes a video stream on the basis of an MPEG standard. An audio decoder decodes an audio contents file. An OSD processor processes a text file and additional information. A video output unit selectively configures decoded video data and text data on one screen and performs encoding and outputting operations based on the format of a display unit. An audio output unit outputs decoded audio data. A user interface receives a user's command. A WLAN card communicates WLAN data with a computer system.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: February 21, 2012
    Assignee: iCUBE
    Inventors: Ji-Hoon Hong, Byung-Ho Lee, Chun-Yong Oh