Abstract: A thin film transistor substrate can include a first thin film transistor on a substrate, the first thin film transistor including a first active layer and a first gate electrode; and a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode, each of the second active layer and the second gate electrode being located farther away from the substrate than the first active layer and the first gate electrode. Also, the thin film transistor substrate can include a first insulating layer disposed between the first gate electrode and the second active layer; and a first connection electrode connecting the first gate electrode with the second active layer, in which the first connection electrode extends through a first contact hole in the first insulating layer and contacts both of the first gate electrode and the second active layer.

Abstract: Disclosed are a pixel circuit comprising an optical fingerprint sensing circuit, a method of driving a pixel circuit comprising an optical fingerprint sensing circuit, and a display device comprising a pixel circuit comprising an optical fingerprint sensing circuit. According to the present disclosure, the pixel circuit comprising an optical fingerprint sensing circuit comprises a pixel control circuit, the pixel control circuit comprising: a first photodetector which receives a light and generates a first signal; a second photodetector which receives a light and generates a second signal; and a self-illuminator which receives differential signals of the first signal and second signal and outputs an output signal, includes at least one transistor component and at least one capacitor component, and outputs a light on the basis of a data signal.

Abstract: The present disclosure relates to a pixel circuit including an optical fingerprint sensing circuit, a method for driving a pixel circuit including the optical fingerprint sensing circuit, and a display device including the pixel circuit including the optical fingerprint sensing circuit. The pixel circuit includes: a self-light emitting element which displays images by a driving current controlled by a driving transistor; and a light-receiving element which receives light emitted from the self-light emitting element and reflected through a fingerprint of a user and converts it into a photocurrent. The driving transistor functions as a buffer which transmits an output voltage of the light-receiving element to an output line of the pixel circuit.

Abstract: The present disclosure related to an optical fingerprint identification display and a driving method thereof. In the optical fingerprint identification display and the driving method thereof, the fingerprint identification display includes: a display panel and a processor. The display panel includes a plurality of pixels arranged in a two-dimensional matrix. The pixel includes: at least one subpixel which emits light on the basis of a first signal received from the processor; and an optical sensor which receives the light emitted from the subpixel and is reflected from a fingerprint and generates a second signal. The processor determines a touch region on the display panel, and transmits the first signal to one or more pixels included in the touch region, and identifies the fingerprint of the user on the basis of the second signal received from the pixel.

Abstract: An organic light emitting diode (OLED) display device includes a thin film transistor substrate including a first substrate, a thin film transistor disposed on the first substrate and a white organic light emitting diode (WOLED) electrically connected to the thin film transistor; a color filter substrate comprising a second substrate that faces the first substrate, and red, green and blue color filters disposed on the second substrate; a quantum dot pattern disposed on the WOLED of the thin film transistor substrate; and a refractive film disposed between the color filter substrate and the thin film transistor substrate provided with the quantum dot pattern.

Abstract: In accordance with at least one aspect of this disclosure, a user input handle for a hand control device of a robotic surgical system can include a gripping portion configured to be grasped by a user. The gripping portion can include a grip safety sensor configured to sense whether the gripping portion is being grasped by a user.

Abstract: A phase shifter includes a first substrate; a microstrip formed on the first substrate so as to extend in a first direction; a ground layer disposed with a space on the upper surface of the microstrip and having a defected ground structure (DGS) with a defected pattern formed therein; a second substrate disposed on the ground layer; and a liquid crystal layer disposed in a space between the first substrate and the second substrate, wherein DC voltage is applied between the ground layer and the microstrip.

Abstract: The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

Abstract: Disclosed is a pixel circuit including an optical fingerprint sensing circuit, a method for driving a pixel circuit including an optical fingerprint sensing circuit, and a display device comprising a pixel circuit including an optical fingerprint sensing circuit. The pixel circuit according to the present disclosure is characterized by comprising: a self-light emitting element which displays an image with a drive current controlled by a drive transistor; and a light-receiving element which receives light emitted from the self-light emitting element and reflected through a user's fingerprint, and converts the light into a photoelectric current, wherein the drive transistor functions as a buffer which transfers the output voltage of the light receiving element to an output line of the pixel circuit.

Abstract: Disclosed are a pixel circuit comprising an optical fingerprint sensing circuit, a method of driving a pixel circuit comprising an optical fingerprint sensing circuit, and a display device comprising a pixel circuit comprising an optical fingerprint sensing circuit. According to the present disclosure, the pixel circuit comprising an optical fingerprint sensing circuit comprises a pixel control circuit, the pixel control circuit comprising: a first photodetector which receives a light and generates a first signal; a second photodetector which receives a light and generates a second signal; and a self-illuminator which receives differential signals of the first signal and second signal and outputs an output signal, includes at least one transistor component and at least one capacitor component, and outputs a light on the basis of a data signal.

Abstract: The present disclosure related to an optical fingerprint identification display and a driving method thereof. In the optical fingerprint identification display and the driving method thereof, the fingerprint identification display includes: a display panel and a processor. The display panel includes a plurality of pixels arranged in a two-dimensional matrix. The pixel includes: at least one subpixel which emits light on the basis of a first signal received from the processor; and an optical sensor which receives the light emitted from the subpixel and is reflected from a fingerprint and generates a second signal. The processor determines a touch region on the display panel, and transmits the first signal to one or more pixels included in the touch region, and identifies the fingerprint of the user on the basis of the second signal received from the pixel.

Abstract: A transportation head for a microchip transfer device capable of minimizing mechanical and chemical damage to a microchip, a microchip transfer device having same, and a transfer method thereby, and the transportation head includes a head body having a pickup area and a dummy area; a first protruding pin disposed in the pickup area of the head body; and a liquid droplet attached to the first protruding pin.

Abstract: A wearable photoluminescence sensor, which is portable and has improved sensitivity and accuracy, and a remote sensing apparatus comprising same, the disclosed wearable photoluminescence sensor includes a reflective support and a semipermeable filter disposed over and under translucent photodiodes, thus allows light of a second wavelength band, having the photoluminescence properties of getting lost or passing through, to be reflected again and thus maximally utilized, and thereby allows sensitivity and accuracy to be improved.

Abstract: The present invention relates to an optical element capable of simultaneously outputting sound from the surface of a display device with an image, the optical element comprising: a first electrode member; a first dielectric elastomer layer disposed on the first electrode member; a second electrode member disposed on the first dielectric elastomer layer; and an optical crystal layer disposed on the second electrode member. Accordingly, in the present invention, image and sound are implemented simultaneously, and thus, it is possible to prevent defects due to mismatching of the image and the sound, and a separate sound system is not required when the display device is manufactured using the optical element, thereby making it possible to reduce components of an electronic product including the display device and reduce the manufacturing cost.

Abstract: Provided is a method of manufacturing gallium nitride quantum dots. The method includes the steps of: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution at a heating temperature to produce gallium nitride; growing the gallium nitride while maintaining the heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.

Abstract: The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

Abstract: An organic light emitting diode (OLED) display device includes a thin film transistor substrate including a first substrate, a thin film transistor disposed on the first substrate and a white organic light emitting diode (WOLED) electrically connected to the thin film transistor; a color filter substrate comprising a second substrate that faces the first substrate, and red, green and blue color filters disposed on the second substrate; a quantum dot pattern disposed on the WOLED of the thin film transistor substrate; and a refractive film disposed between the color filter substrate and the thin film transistor substrate provided with the quantum dot pattern.

Abstract: The present invention relates to a phase shifter comprising a DGS and a radio communication module comprising the same. The phase shifter comprises: a first substrate; a microstrip formed on the first substrate so as to extend in a first direction; a ground layer disposed with a space on the upper surface of the microstrip and having a defected ground structure (DGS) with a defected pattern formed therein; a second substrate disposed on the ground layer; and a liquid crystal layer disposed in a space between the first substrate and the second substrate, wherein DC voltage is applied between the ground layer and the microstrip.

Abstract: Provided is a method of manufacturing gallium nitride quantum dots. The method includes the steps of: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution at a heating temperature to produce gallium nitride; growing the gallium nitride while maintaining the heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.