Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.

Abstract: The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.

Abstract: A capacitor device is provided. The capacitor device includes at least one capacitor. The capacitor device also includes a first capacitor and a first filter coupling the first capacitor and a conductive region, wherein the first capacitor has a first resonance frequency and the first filter is configured to operate at a first frequency band covering the first resonance frequency.

Abstract: The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.

Abstract: A capacitor device is provided. The capacitor device includes at least one capacitor. The capacitor device also includes a first capacitor and a first filter coupling the first capacitor and a conductive region, wherein the first capacitor has a first resonance frequency and the first filter is configured to operate at a first frequency band covering the first resonance frequency.

Abstract: A chip package with built-in capacitor structure including an integrated circuit (IC) unit, a capacitor unit, a carrier and a molding compound is provided. The capacitor unit is disposed on the IC unit and includes a first metal foil, a second metal foil, and a dielectric layer disposed between the first metal foil and the second metal foil. The carrier is disposed on the surface away from the dielectric layer of the second metal foil. The first metal foil is electrically connected to the carrier, the second metal foil is electrically connected to the carrier, the IC unit is electrically connected to the carrier, the IC unit is electrically connected to the first metal foil, and the IC unit is electrically connected to the second metal foil. The molding compound is disposed on the carrier for fixing the IC unit, the capacitor unit and the carrier.