Abstract: Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones.

Abstract: A solar cell having a transparent conducting layer disposed upon a substrate, an electron transporting layer (ETL) disposed upon the transparent conducting layer, a perovskite layer disposed upon the ETL layer, an inorganic dichalcogenide material disposed upon the perovskite layer, and a conducting material disposed upon the dichalcogenide material, the dichalcogenide material and the conducting material together comprising a dichalcogenide composite electrode. In another embodiment, the solar cell has a first conducting material disposed upon a substrate, an inorganic dichalcogenide material disposed upon the first conducting material forming a dichalcogenide composite electrode, a perovskite layer disposed upon the dichalcogenide composite electrode, an ETL disposed upon the perovskite layer, and a second conducting material disposed upon the ETL.

Abstract: A semiconductor PV detector comprises a Ge layer and a Pb-chalcogenide layer coupled to the Ge layer. The Ge layer comprises a first conduction band with a first conduction potential and a first valence band with a first valence potential. The Pb-chalcogenide layer comprises a second conduction band with a second conduction potential that is lower than the first conduction potential and a second valence band with a second valence potential that is lower than the first valence potential. The Ge layer and the Pb-chalcogenide layer form a heterojunction configured to allow electrons to flow from the Ge layer to the Pb-chalcogenide layer and allow holes to flow from the Pb-chalcogenide layer to the Ge layer.

Abstract: Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a Pbs thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level Pbs photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The Pbs photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones.

Abstract: A semiconductor PV detector comprises a Ge layer and a Pb-chalcogenide layer coupled to the Ge layer. The Ge layer comprises a first conduction band with a first conduction potential and a first valence band with a first valence potential. The Pb-chalcogenide layer comprises a second conduction band with a second conduction potential that is lower than the first conduction potential and a second valence band with a second valence potential that is lower than the first valence potential. The Ge layer and the Pb-chalcogenide layer form a heterojunction configured to allow electrons to flow from the Ge layer to the Pb-chalcogenide layer and allow holes to flow from the Pb-chalcogenide layer to the Ge layer.

Abstract: Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.

Abstract: Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.

Abstract: Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.

Abstract: The disclosure describes methods for preparing lead salt materials which are sensitive to the mid-infrared spectrum which can be used to manufacture high-uniformity, high-detectivity, polycrystalline lead salt photoconductive and photovoltaic photodetectors.