Patents by Inventor Jill Hildreth

Jill Hildreth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same
    Patent number: 9040380
    Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: May 26, 2015
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Xiang Hu, Jin Ping Liu, Jill Hildreth, Taejoon Han
  • INTEGRATED CIRCUITS HAVING LATERALLY CONFINED EPITAXIAL MATERIAL OVERLYING FIN STRUCTURES AND METHODS FOR FABRICATING SAME
    Publication number: 20150069515
    Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.
    Type: Application
    Filed: September 11, 2013
    Publication date: March 12, 2015
    Applicant: GLOBALFOUNDRIES, Inc.
    Inventors: Xiang Hu, Jin Ping Liu, Jill Hildreth, Taejoon Han
  • Method of forming a semiconductor layer
    Patent number: 7972922
    Abstract: A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: July 5, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Hunter J. Martinez, John J. Hackenberg, Jill Hildreth, Ross E. Noble
  • METHOD OF FORMING A SEMICONDUCTOR LAYER
    Publication number: 20100129952
    Abstract: A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.
    Type: Application
    Filed: November 21, 2008
    Publication date: May 27, 2010
    Inventors: Hunter J. Martinez, John J. Hackenberg, Jill Hildreth, Ross E. Noble