Abstract: This application provides a secure boot apparatus and method. A control circuit in the secure boot apparatus can obtain boot code in a nonvolatile memory by using a non-programmable circuit, and verify the boot code by using a root of trust. In this way, even if the root of trust is not built in a processor, the verification on the boot code can be implemented by using the control circuit. This effectively reduces dependency of a secure boot process on processor performance. In addition, because the non-programmable circuit can be respectively coupled to the control circuit and the nonvolatile memory through two interfaces of different types, a requirement for the secure boot process on an interface protocol type of the control circuit is reduced, and application flexibility of a secure boot solution is improved.

Abstract: Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.

Abstract: Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.