Abstract: A hitch device comprising: (a) a hitch bar that connects the hitch device to a vehicle; (b) a hitch mount in communication with the hitch bar; (c) a ball mount, a ball, or both that is in communication with and extends through a portion of the hitch mount; (d) a lifting device that is connected to the hitch mount, the hitch bar, or both, wherein the lifting device includes a lifting cylinder; and (e) one or more gears in communication with the lifting cylinder; wherein the lifting device assists in moving the ball mount, the ball, or both through the hitch mount; and wherein the lifting cylinder is an electric motor.

Abstract: A hitch device comprising: (a) a hitch bar that connects the hitch device to a vehicle; (b) a hitch mount in communication with the hitch bar; (c) a ball mount, a ball, or both that is in communication with and extends through a portion of the hitch mount; (d) a lifting device that is connected to the hitch mount, the hitch bar, or both, wherein the lifting device includes a lifting cylinder; and (e) one or more gears in communication with the lifting cylinder; wherein the lifting device assists in moving the ball mount, the ball, or both through the hitch mount; and wherein the lifting cylinder is an electric motor.

Abstract: A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N2, an optional oxygen-containing gas such as O2, and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O2 with N2 and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.

Abstract: A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N2, an optional oxygen-containing gas such as O2, and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O2 with N2 and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.

Abstract: A method and apparatus for reactive plasma surfacing includes at least two electrodes between which reactive gases are passed. The reactive gases are ionized by the arc between the electrodes, creating a plasma of heated, ionized, reactive gases. The plasma is then applied to a surface to be treated, causing a chemical reaction between the plasma and the surface and resulting in a new diffusional substrate surface on the treated object. The process occurs at substantially atmospheric pressure, and may include an inert gas to shield the process from the surrounding environment.