Abstract: A stacked IC structure has an integrated circuit (IC) having a front IC side, a back IC side, and a first conductive feature formed on the front IC side. A through-chip via connects to the first conductive feature on the front IC side. A substrate has an external circuit formed on a front surface. The IC attaches to the front surface of the substrate and the through-chip via forms a connection between the first conductive feature and the external circuit.

Abstract: A microcircuit has a node thereon. A center conductor is electrically connected to the node and the center conductor has a length to minimum radius ratio of at least 50. A method of for providing electrical interconnections in a microcircuit, comprises the steps of depositing conductive bumps on the microcircuit; and aligning and bonding a center conductor to the conductive bumps, the center conductor having a first end and a second end, and the center conductor having a length to minimum radius ratio of at least 50.

Abstract: A stacked IC structure has an integrated circuit (IC) having a front IC side, a back IC side, and a first conductive feature formed on the front IC side. A through-chip via connects to the first conductive feature on the front IC side. A substrate has an external circuit formed on a front surface. The IC attaches to the front surface of the substrate and the through-chip via forms a connection between the first conductive feature and the external circuit.

Abstract: Wire bonds connect current-carrying edges of high-frequency planar conductors to other electrical devices. In one embodiment, planar transmission lines are interconnected using two wire bonds. One bond wire extends from an edge of a first center conductor to a corresponding edge of a second center conductor, and a second bond wire extends from the other edge of the first center conductor to the other edge of the second center conductor. Embodiments include center conductors at different heights and having different widths, and different electrical devices, such as semiconductor integrated circuits. In a particular embodiment, ball bonding is used. In some embodiments, a tack bond is included after a ball bond to allow closer attachment of the bond wire to the edge of the conductor.

Abstract: An interconnection includes a microcircuit package having a slot, and a receiving feature. A bead ring is fitted into the receiving feature. A center conductor extends through a dielectric support disposed in the bead ring and through the slot. The center conductor forms a coaxial transmission structure in cooperation with the bead ring and the dielectric support, and forms a slab line transmission structure in cooperation with the slot.

Abstract: An interconnection includes a microcircuit package having a slot, and a receiving feature. A bead ring is fitted into the receiving feature. A center conductor extends through a dielectric support disposed in the bead ring and through the slot. The center conductor forms a coaxial transmission structure in cooperation with the bead ring and the dielectric support, and forms a slab line transmission structure in cooperation with the slot.

Abstract: Wire bonds connect current-carrying edges of high-frequency planar conductors to other electrical devices. In one embodiment, planar transmission lines are interconnected using two wire bonds. One bond wire extends from an edge of a first center conductor to a corresponding edge of a second center conductor, and a second bond wire extends from the other edge of the first center conductor to the other edge of the second center conductor. Embodiments include center conductors at different heights and having different widths, and different electrical devices, such as semiconductor integrated circuits. In a particular embodiment, ball bonding is used. In some embodiments, a tack bond is included after a ball bond to allow closer attachment of the bond wire to the edge of the conductor.