Abstract: Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

Abstract: Systems and methods ablate electrically conductive links using laser pulses with optimized temporal power profiles and/or polarizations. In certain embodiments, the polarization property of a laser beam is set such that coupling between the laser beam and an electrically conductive link reduces the pulse energy required to ablate the electrically conductive link. In one such embodiment, the polarization is selected based on a depth of a target link structure. In another embodiment, the polarization changes as deeper material is removed from a target location. In addition, or in other embodiments, a first portion of a temporal power profile of a laser beam includes a rapid rise time to heat an upper portion of an electrically conductive link so as to form cracks in a passivation layer over upper corners of the electrically conductive link, without forming cracks at lower corners of the electrically conductive link.

Abstract: Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.