Abstract: A data read-out circuit is provided for a nonvolatile semiconductor memory having at least one bit line and a plurality of memory transistors connected to the bit line, and including at least one data sense line. The data read-out circuit includes a precharge set circuit, a current supplying circuit and a sense amplifier. The precharge set circuit is connected between the bit line and the data sense line and is operative to set a voltage of the bit line to a preselected precharge voltage lower than a power supply voltage. The current supplying circuit supplies a precharge current to the data sense line such that the bit line is precharged to the precharge voltage. The current supplying circuit also supplies a sense current lower than the precharge current, such that variation of the precharge voltage based on data stored in a selected memory transistor connected to the bit line is amplified to the voltage variation on the data sense line.