Abstract: A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20-30 nanometers or more.

Abstract: A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. That is, if a small adjustment in one or more dimensions of a photomask is desired, the photomask may be exposed to the deionized water and ozone solution for only a few moments, whereas if a much larger adjustment is necessary, the photomask may be exposed to the solution for several hours. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20–30 nanometers or more.