Patents by Inventor Jim Ricker

Jim Ricker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for reducing programmed volume of phase change memory
    Patent number: 8569729
    Abstract: A phase change memory includes a volume of phase change material disposed between, and coupled to, two electrodes, with the composition of a region of at least one of the two electrodes or phase change material having been compositionally altered to reduce the programmed volume of the phase change material.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: October 29, 2013
    Assignee: Ovonyx, Inc.
    Inventor: Jim Ricker
  • Method and Apparatus for Reducing Programmed Volume of Phase Change Memory
    Publication number: 20110240945
    Abstract: A phase change memory includes a volume of phase change material disposed between, and coupled to, two electrodes, with the composition of a region of at least one of the two electrodes or phase change material having been compositionally altered to reduce the programmed volume of the phase change material.
    Type: Application
    Filed: June 20, 2011
    Publication date: October 6, 2011
    Inventor: Jim Ricker
  • Method and apparatus for reducing programmed volume of phase change memory
    Patent number: 7964861
    Abstract: A phase change memory includes a volume of phase change material disposed between, and coupled to, two electrodes, with the composition of a region of at least one of the two electrodes or phase change material having been compositionally altered to reduce the programmed volume of the phase change material.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: June 21, 2011
    Assignee: Ovonyx, Inc.
    Inventor: Jim Ricker
  • Method for manufacturing Chalcogenide devices
    Publication number: 20090298222
    Abstract: A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 3, 2009
    Inventors: Tyler Lowrey, Jeff Fournier, Robert Nuss, Carl Schell, Guy Wicker, Jim Ricker, James Reed, Ed Spall, Sergey Kostylev, Wolodymyr Czubatyj, Regino Sandoval
  • Method and apparatus for reducing programmed volume of phase change memory
    Publication number: 20090114898
    Abstract: A phase change memory includes a volume of phase change material disposed between, and coupled to, two electrodes, with the composition of a region of at least one of the two electrodes or phase change material having been compositionally altered to reduce the programmed volume of the phase change material.
    Type: Application
    Filed: November 6, 2007
    Publication date: May 7, 2009
    Inventor: Jim Ricker