Abstract: A high-voltage semiconductor MOS process that is fully compatible with low-voltage MOS process is provided. The high-voltage N/P well are implanted into the substrate prior to the definition of active areas. The channel stop doping regions are formed after the formation of field oxide layers, thus avoiding lateral diffusion of the channel stop doping regions. In addition, the grade drive-in process used to activate the grade doping regions in the high-voltage device area and the gate oxide growth of the high-voltage devices are performed simultaneously.

Abstract: A high-voltage semiconductor MOS process that is fully compatible with low-voltage MOS process is provided. The high-voltage N/P well are implanted into the substrate prior to the definition of active areas. The channel stop doping regions are formed after the formation of field oxide layers, thus avoiding lateral diffusion of the channel stop doping regions. In addition, the grade drive-in process used to activate the grade doping regions in the high-voltage device area and the gate oxide growth of the high-voltage devices are performed simultaneously.

Abstract: A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.