Abstract: A low-profile coupled inductor is disclosed to provide compact and high performance magnetic coupling. The low-profile coupled inductor has an asymmetrical geometry, having a pair of complementary ferrite cores supporting a pair of conducting strips in an alternating serpentine pattern. One or more core gaps exist between the cores to create a strong flux coupling between adjacent magnetic fields of either conducting strip. The alternating serpentine conductors and core gaps serve to increase energy transfer between the magnetic fields and improve the overall power density of the low-profile coupled inductor.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor device includes a capacitive coupled photodiode that is formed within a region of a semiconductor substrate. The photodiode receives an incident light and generates a corresponding electric charge. The CMOS image sensor device includes a reset transistor coupled to the photodiode for reverse biasing the photodiode with a predetermined voltage. The CMOS image sensor device further includes a buffer circuit and a capacitor, which is interposed between the photodiode and the buffer circuit. The capacitor is configured to transfer the electric charge to the buffer circuit. The buffer circuit may include an emitter follower or a source follower transistor.

Abstract: A method for forming a CMOS image sensing pixel, which is configured to determine a color, includes providing an n-type substrate that includes a first thickness and a first width. The method also includes forming a p-type layer, the p-type layer overlaying the n-type substrate. The p-type layer includes a second thickness and a second width. The second thickness and the second width are associated with a light characteristic. The method additionally includes forming an n-type layer, the n-type layer overlaying the p-type layer. The n-type layer includes a third thickness and a third width. In addition, the method includes forming a pn junction between the p-type layer and the n-type layer. The pn junction includes a fourth width. The method also includes providing a control circuit. The control circuit is electrically coupled to the n-type substrate.

Abstract: A method is provided for determining a color using a CMOS image sensor. The CMOS image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The method includes applying a first voltage on the n-type substrate and obtaining a first output, which is associated with the first voltage. The method further includes applying a second voltage on the n-type substrate and obtaining a second output, which is associated with the second voltage. The method additionally includes applying a third voltage on the n-type substrate and obtaining a third output, which is associated with the third voltage. The method also includes providing a plurality of weighting factors and determining the color based on the plurality of weighting factors, the first output, the second output, and the third output.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor device includes a capacitive coupled photodiode that is formed within a region of a semiconductor substrate. The photodiode receives an incident light and generates a corresponding electric charge. The CMOS image sensor device includes a reset transistor coupled to the photodiode for reverse biasing the photodiode with a predetermined voltage. The CMOS image sensor device further includes a buffer circuit and a capacitor, which is interposed between the photodiode and the buffer circuit. The capacitor is configured to transfer the electric charge to the buffer circuit. The buffer circuit may include an emitter follower or a source follower transistor.

Abstract: A system is provided for determining a color using a CMOS image sensor. The system includes an input port for receiving a user command. The system further includes an image sensor, an optical device that forms an image on the image sensor, and a processor. The image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The image sensor includes a control circuit that applies a first voltage on the n-type substrate to obtain a first output. The control circuit applies a second voltage on the n-type substrate to obtain a second output. The control circuit also applies a third voltage on the n-type substrate to obtain a third output. The p-type epitaxy layer includes a silicon germanium material. The image sensor additionally includes an epitaxy layer interposed between the n-type substrate and the p-type epitaxy layer.

Abstract: Block copolymer having improved compression set comprising 40-98 wt-% soft segment, 1.9-20 wt-% hard segment, and 0.05-3 wt-% monofunctional ionic endgroups. The incorporation of ionomers into diisocyanate-based thermoplastic polyurethane materials greatly improves compression set with little impact on the overall TPU formulation. A typical formulation for making the block copolymer contains 84.2% polydimethylsiloxane, 12.9% diisocyanate, 2.9% diamine chain extender, 0.15% sodium 2-[bis(2-hydroxyethyl)amino]ethylsulfonate, and 0.05% isethionic acid. The polymeric material may be configured, for instance, as a contact lens, prosthetic spinal nucleus, orthopedic bearing surface, gasket, or sealant.

Abstract: A method is provided for determining a color using a CMOS image sensor. The CMOS image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The method includes applying a first voltage on the n-type substrate and obtaining a first output, which is associated with the first voltage. The method further includes applying a second voltage on the n-type substrate and obtaining a second output, which is associated with the second voltage. The method additionally includes applying a third voltage on the n-type substrate and obtaining a third output, which is associated with the third voltage. The method also includes providing a plurality of weighting factors and determining the color based on the plurality of weighting factors, the first output, the second output, and the third output.

Abstract: A system is provided for determining a color using a CMOS image sensor. The system includes an input port for receiving a user command. The system further includes an image sensor, an optical device that forms an image on the image sensor, and a processor. The image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The image sensor includes a control circuit that applies a first voltage on the n-type substrate to obtain a first output. The control circuit applies a second voltage on the n-type substrate to obtain a second output. The control circuit also applies a third voltage on the n-type substrate to obtain a third output. The p-type epitaxy layer includes a silicon germanium material. The image sensor additionally includes an epitaxy layer interposed between the n-type substrate and the p-type epitaxy layer.

Abstract: A method for forming a CMOS image sensing pixel, which is configured to determine a color, includes providing an n-type substrate that includes a first thickness and a first width. The method also includes forming a p-type layer, the p-type layer overlaying the n-type substrate. The p-type layer includes a second thickness and a second width. The second thickness and the second width are associated with a light characteristic. The method additionally includes forming an n-type layer, the n-type layer overlaying the p-type layer. The n-type layer includes a third thickness and a third width. In addition, the method includes forming a pn junction between the p-type layer and the n-type layer. The pn junction includes a fourth width. The method also includes providing a control circuit. The control circuit is electrically coupled to the n-type substrate.

Abstract: Block copolymers are formulated with multifunctional chain extenders. The block copolymers include a soft segment and a hard segment made from a diisocyanate, an alkylene diamine chain extender, and a multifunctional chain extender which provides delayed crosslinking. The multifunctional chain extenders have a functionality and typically have at least one OH group. The multifunctional chain extenders may be aliphatic or aromatic triols or polyols, or may have other configurations, as described. The resulting block copolymers have improved mechanical properties such as compression set. They may be used in medical applications, or in industrial applications such as seal and gasket applications, including O-rings, window seals, and automotive gaskets. The initially-formed polyurethane resin behaves as a thermoplastic processable material, while the configured end-use product is thermoset.

Abstract: A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.

Abstract: A method for determining photocurrents corresponding to a plurality of wavelength ranges. The method includes receiving at least a light by a photodiode within a first wavelength range. The first wavelength range includes a second wavelength range and a third wavelength range. The method provides a first bias voltage to the photodiode and determines a first photocurrent within the first wavelength range, the first photocurrent being associated with the photodiode and the first bias voltage. The method also provides a second bias voltage to the photodiode, different from the first bias voltage, and determines a second photocurrent within the first wavelength range, the second photocurrent being associated with the photodiode and the second bias voltage.

Abstract: A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.

Abstract: A photosensitive thick film composition. The photosensitive thick film composition can produce electrode material with high resolution and high contrast. The photosensitive thick film composition includes an acrylic copolymer, a photoinitiator, a reactive monomer, a conductive metal, glass powder, an additive, and an organic solvent.

Abstract: A photosensitive thick film composition. The photosensitive thick film composition can produce electrode material with high resolution and high contrast. The photosensitive thick film composition includes an acrylic copolymer, a photoinitiator, a reactive monomer, a conductive metal, glass powder, an additive, and an organic solvent.

Abstract: A method and system are provided for measuring a characteristic of a lens. By directing light to a lens, and receiving reflected light from a opposite end faces of the lens on an image plane, a determination from the focused spots on the image plane can be made as to a characteristic of the lens, such as its focal length.

Abstract: The present invention provides a water soluble polymer which is prepared by the following steps. First, a carboxyl group-containing polymer is reacted with an alkaline reagent so that a portion of the carboxyl groups are reacted in an amount sufficient to make the polymer water soluble. Then, the polymer obtained is reacted with an epoxide containing unsaturated bonds and/or heteroatoms so that 1 to 100 mole percent of the remaining carboxyl groups of the polymer are reacted with the epoxide to form ester groups via a ring-opening reaction of epoxides, wherein the heteroatom can be silicon, nitrogen, phosphorus or sulfur. The water soluble polymer of the present invention can be used as a photosensitive resin. When the photoresist composition is used for preparing printed ciruit boards, it exhibits high photosensitivity, good water dispersability, storage stability, and good adhesion to copper. In addition, the problem of sticking to the mask can be prevented.

Abstract: Ghosts accompanying composite video signals are suppressed using separate filters for suppressing macroghosts and microghosts, the filtering parameters of these filters being adjustable responsive to digital programming signals generated by a computer. Computation includes data acquisition and channel characterization steps followed by a decision step for comparing the most recent set of channel characterization results with the next most recent set to determine whether stable ghosting conditions obtain. Data acquisition and channel characterization steps are repeated until stable ghosting conditions obtain, so the subsequent calculations with respect to the filter used for suppressing macroghosts are accurately performed. Where the filter suppressing macroghosts includes IIR and FIR sections for suppressing post-ghosts and preghosts, respectively, these calculations are carried out substantially on a separable basis, simplifying the calculations.